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NR0916 Aluminum Nitride Substrates Maximize

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NR0916 Aluminum Nitride Substrates

Catalog No.CO0201
MaterialAlN, aluminum nitride
Purity99%, 99.7%
Density3.26 g/cm3
AppearanceWhite, Light Grey

Stanford Advanced Materials provides aluminum nitride ceramic substrates with various surface finishing and metalization processes. Aluminum nitride is a great material for subastrates for electronics. Our aluminum nitride ceramic could be used by semiconductor industry and will fulfil most of the requirements.

More details

Aluminum nitride, AlN, is a light grey or white ceramic material which has a density of 3.26g/cm3. Due to its high thermal conductivity and great electrical insulation, AlN was used in microelectronic industries. Surface oxidization happened in air even for room temperature, however, the aluminum oxide layer can protect the material up to 1370 C. Metallization methods are available to allow aluminum nitride to be used in electronics applications similar to those of alumina and beryllium oxide.

The hardness of aluminum nitride ceramic is even higher than alumina, the traditional technical ceramic, making it an ideal material for applications that require good wear resistance. 

Advantage of AlN ceramic

* Very high thermal conductivity (> 170 W/mK)

* High electrical insulation capacity (>1.1012Ωcm)

* Strength according to the double ring method >320 MPa (biaxial strength)

* Low thermal expansion 4 to 6x10-6K-1(between 20 and 1000°C)

* Good metallization capacity


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