Ion implantation technology has been applied in many fields of industrial production, among which metal material industry and semiconductor industry are widely used.
Metal material industry
Modification of metal material
Ion implantation applied to metal material modification is to inject the ions of certain amount and energy into the surface of metal materials which are treated by heat treatment or surface coating process to change the chemical composition, physical structure and phase state of the material surface, then the mechanical, chemical and physical properties of the materials can be changed. Specifically, ion implantation can change the acoustics, optics and superconducting properties of materials, and improve the working hardness, wear resistance, corrosion resistance and oxidation resistance of materials. At present, it has been applied to the air hydraulic pump distribution, internal combustion engine precision coupling, automobile engine parts, hard alloy cutting tools, and large size precision wear-resisting parts.
Prolong the service life of the die
As a new surface strengthening process, ion implantation has been applied in different materials and has achieved many achievements. Due to the different working conditions, many failure forms have appeared in the mold of the same material, and the advantages of ion implantation process can make up for these defects. As long as the designer uses different ion implanted devices to inject different elements into the mold selectively according to different failure forms， the goal of extending the service life of the mold can be achieved conveniently.
With the development of ion implantation equipment, ion implantation technology has developed rapidly in the integrated circuit industry. Because of the good controllability and repeatability of ion implantation technology, the designer can design ideal impurity distribution according to the requirements of circuit or device parameters.
The manufacture of a complete semiconductor device in a modern semiconductor manufacturing process usually involves many steps (15 ~ 25 steps) of ion implantation. The main process parameters of ion implantation are impurity type, injecting energy and doping dosage. The types of impurities can be divided into n-type and p-type. The injection of energy determines the depth of the impurity atoms injected into the silicon, the high energy is injected deeply, and the low energy is injected lightly. Doping dose refers to the concentration of impurity atoms, which determines the conductivity of doping layer. With the progress of semiconductor technology, the process of ultra-shallow junction becomes the key, especially when making semiconductor devices under 65nm. The ion implantation process, with its precise injection depth and the controllability of the concentration, and the stable repeatability, shows its importance in the manufacture of advanced semiconductor devices again.
Stanford Advanced Materials (SAM) provides customized ion implantation components with high quality and competitive price, which includes ion implantation components (Tungsten), ion implantation components (Molybdenum), ion implantation components (TZM Alloy), etc.