CVD Monolayer Graphene Description
CVD Monolayer Graphene on SiO2 Substrate refers to a method of synthesizing graphene, a single layer of carbon atoms arranged in a hexagonal lattice, on a silicon dioxide surface using chemical vapor deposition techniques.
Monolayer graphene refers to a single layer of carbon atoms arranged in a honeycomb lattice structure. This single-layer structure is highly sought after due to its unique electrical, thermal, and mechanical properties, which differ significantly from bulk graphite or other forms of carbon.
Silicon dioxide (SiO2) is a common substrate used in semiconductor technology and microelectronics due to its excellent insulating properties, thermal stability, and compatibility with standard lithographic processes.
CVD Monolayer Graphene Specification
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Graphene Film Specification
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Growth Method
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CVD (Chemical Vapor Deposition)
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Appearance
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Transparent
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Transparency
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>97%
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Coverage
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>95%
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Thickness (theoretical)
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0.345 nm
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AFM Thickness
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<1 nm
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Electron Mobility on SiO2/Si
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≈1500 cm2/V·s
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Sheet Resistance on SiO2/Si
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350±40 Ohms/sq (1cm x1cm)
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Grain Size
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Up to 20 μm
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Cu Foil Thickness
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18 μm
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Roughness
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~80 nm
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Substrate SiO2/Si
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Dry Oxide Thickness
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90 nm (±5%)
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Type/Dopant
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P/B
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Orientation
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<100>
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Front Surface
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Polished
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Dielectric Constant of the SiO2 layer
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3.9
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CVD Monolayer Graphene Applications
- Electronics: Graphene on SiO2 is used in the fabrication of field-effect transistors (FETs), interconnects, and other electronic components.
- Sensors: Due to its high surface area and conductivity.
- Optoelectronics: As transparent conductive electrodes in displays and photovoltaic devices.
- Research: To study fundamental properties and behaviors of graphene in controlled environments.
CVD Monolayer Graphene Packing
CVD Monolayer Graphene is carefully handled during storage and transportation to preserve the quality of our product in its original condition.
