CY2535 Boron Nitride (BN) Single Crystal Substrates

Catalog No. CY2535
Size 0.6-1.0 mm
Material BN
Orientation (100), (110), (111), +/- 0.5 degree
Growth Method CVD

Boron Nitride (BN) Single Crystal Substrates have been widely used in the industry. Stanford Advanced Materials (SAM) has over 20 years’ experience in the manufacture of the Boron Nitride (BN) Single Crystal Substrates.

Related: LiAlO2 Crystal Substrate, LAST Crystal Substrate, LiF Crystal Substrate, NdGaO3 Crystal Substrate, Gallium Antimonide Single Crystal Substrate.

Boron Nitride (BN) Single Crystal Substrates Description

Boron Nitride (BN) Single Crystal Substrates can be used as substrates for graphene in semiconductor applications such as optics and electronics. Stanford Advanced Materials (SAM) has rich experience in manufacturing Boron Nitride (BN) Single Crystal Substrates and provides customers with high-quality Boron Nitride (BN) Single Crystal Substrates at an affordable price.

 

Boron Nitride (BN) Single Crystal Substrates Specifications

Boron Nitride (BN) single crystal substrates

Crystal Structure

Hexagonal

Purity

> 99.5%

Resistivity

Insulator

Density

1.9 to 2.1 g/cm3

Poisson's Ratio

0.11

Orientation

<100>,<110>,<111>

Specific Heat

840 to 1610 J/kg-K

Packing

 ~10 pcs/Box 

 

Boron Nitride (BN) Single Crystal Substrates Applications

Boron Nitride (BN) Single Crystal Substrates can be used as substrates for graphene in semiconductor applications such as optics and electronics.

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