sales@samaterials.com
(949) 407-8904
sales@samaterials.com
(949) 407-8904
| Catalog No. | CY2535 |
|---|---|
| Size | 0.6-1.0 mm |
| Material | BN |
| Orientation | (100), (110), (111), +/- 0.5 degree |
| Growth Method | CVD |
Boron Nitride (BN) Single Crystal has been widely used in the industry. Stanford Advanced Materials (SAM) has over 20 years’ experience in the manufacture of the Boron Nitride (BN) Single Crystal.
Related: LiAlO2 Crystal Substrate, LAST Crystal Substrate, LiF Crystal Substrate, NdGaO3 Crystal Substrate, Gallium Antimonide Single Crystal Substrate.
Boron Nitride (BN) Single Crystal can be used as substrates for graphene in semiconductor applications such as optics and electronics. Stanford Advanced Materials (SAM) has rich experience in manufacturing Boron Nitride (BN) Single Crystal and provides customers with high-quality Boron Nitride (BN) Single Crystal at an affordable price.
|
Boron Nitride (BN) single crystal |
|
|
Crystal Structure |
Hexagonal |
|
Purity |
> 99.5% |
|
Resistivity |
Insulator |
|
Density |
1.9 to 2.1 g/cm3 |
|
Poisson's Ratio |
0.11 |
|
Orientation |
<100>,<110>,<111> |
|
Specific Heat |
840 to 1610 J/kg-K |
|
Packing |
~10 pcs/Box |
Boron Nitride (BN) Single Crystal can be used as substrates for graphene in semiconductor applications such as optics and electronics.
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