CY2535 Boron Nitride (BN) Single Crystal

Catalog No. CY2535
Size 0.6-1.0 mm
Material BN
Orientation (100), (110), (111), +/- 0.5 degree
Growth Method CVD

Boron Nitride (BN) Single Crystal has been widely used in the industry. Stanford Advanced Materials (SAM) has over 20 years’ experience in the manufacture of the Boron Nitride (BN) Single Crystal.

Related: LiAlO2 Crystal Substrate, LAST Crystal Substrate, LiF Crystal Substrate, NdGaO3 Crystal Substrate, Gallium Antimonide Single Crystal Substrate.

Boron Nitride (BN) Single Crystal Description

Boron Nitride (BN) Single Crystal can be used as substrates for graphene in semiconductor applications such as optics and electronics. Stanford Advanced Materials (SAM) has rich experience in manufacturing Boron Nitride (BN) Single Crystal and provides customers with high-quality Boron Nitride (BN) Single Crystal at an affordable price.

 

Boron Nitride (BN) Single Crystal Specifications

Boron Nitride (BN) single crystal

Crystal Structure

Hexagonal

Purity

> 99.5%

Resistivity

Insulator

Density

1.9 to 2.1 g/cm3

Poisson's Ratio

0.11

Orientation

<100>,<110>,<111>

Specific Heat

840 to 1610 J/kg-K

Packing

 ~10 pcs/Box 

 

Boron Nitride (BN) Single Crystal Applications

Boron Nitride (BN) Single Crystal can be used as substrates for graphene in semiconductor applications such as optics and electronics.

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