CY3451 Cu Coated Ta/SiO2 Silicon Wafer

Catalog No. CY3451
Composition (Cubic) Cu, Ta, SiO2
Purity >99.99%
Size 2, 4, 6, 8, 12” dia 0.525mm thickness
Orientation Cu <111>

Cu Coated Ta/SiO2 Silicon Wafer can be used in the nano field, scanning electron microscopy (SEM), atomic force microscopy (AFM), and other scanning probe microscope ranging. Stanford Advanced Materials (SAM) has rich experience in manufacturing and supplying high-quality Optical Products.

Related products: Ti coated SiO2/Si Substrate, Ni Coated SiO2/Si Substrate, Gold-plated Silicon Wafer, Pt-plated Silicon Wafer, Ag-plated Silicon Wafer

Cu Coated Ta/SiO2 Silicon Wafer Description

Cu Coated Ta/SiO2 Silicon Wafer can be used as substrates in the nano field, scanning electron microscopy (SEM), atomic force microscopy (AFM), and other scanning probe microscope ranging, as well as cell culture, protein DNA microarrays, and reflectometers. The silicon wafer of this product is generally plated with a layer of Cu with a thickness of 400nm, and then with a layer of Ta with a thickness of 50nm.

Cu Coated Ta/SiO2 Silicon Wafer Specifications

Purity (%)

>99.99

Size

2, 4, 6, 8, 12” dia

0.525mm thickness Si Wafer

300 nm thickness SiO2

Orientation

Cu <111>

Thickness of Cu <111>

400 nm

Thickness of Ta

50 nm

Resistivities

1-20 ohm-cm

Structure

P type, B doped, <100> orientation, SSP

Cu Coated Ta/SiO2 Silicon Wafer Applications

Widely used as substrates in the nano field, scanning electron microscopy (SEM), atomic force microscopy (AFM), and other scanning probe microscope ranging, as well as cell culture, protein DNA microarrays, and reflectometers.

Cu Coated Ta/SiO2 Silicon Wafer Packaging

Our Cu Coated Ta/SiO2 Silicon Wafer is carefully handled during storage and transportation to preserve the quality of our product in its original condition.

Packing: in 1000 class clean room with plastic bag

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