Magnesium Aluminate (MgAl6O10) Crystal Substrates Description
Magnesium Aluminate (MgAl6O10) Crystal Substrates represent a significant advancement in substrate materials, particularly for the epitaxial growth of semiconductors such as Gallium Nitride (GaN) and Zinc Oxide (ZnO). With their optimized properties, these crystals offer a superior alternative to the traditionally used MgAl2O4 substrates. MgAl6O10 crystals exhibit a lower lattice mismatch with epitaxial layers, facilitating improved structural and electrical properties of the grown films. The lower melting point of MgAl6O10 not only allows for the production of crystals with superior quality but also supports the growth of larger crystal sizes. This is crucial for achieving higher yield and uniformity in device fabrication.
Magnesium Aluminate (MgAl6O10) Crystal Substrates Specifications
Material
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MgAl6O10
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Crystal Structure
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Cubic
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Density (g/cm³)
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3.98
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Available orientations
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(100), (111), (110)
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Lattice parameter
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a = 7.978 Å
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Sizes
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5x5x0.5mm, 10x10x0.5mm, etc.
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Thickness (mm)
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0.5, 1.0
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Polishing
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Single-side polished (SSP) or double-side polished (DSP)
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Package
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Packed with class 100 bags in class 1000 clean room.
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Magnesium Aluminate (MgAl6O10) Crystal Substrates Application
Magnesium Aluminate (MgAl6O10) Crystal Substrates are primarily used as substrates for the epitaxial growth of GaN and ZnO. They are instrumental in the development of high-performance optoelectronic devices, including LEDs, laser diodes, and photodetectors.
Magnesium Aluminate (MgAl6O10) Crystal Substrates Packaging
Our Magnesium Aluminate (MgAl6O10) Crystal Substrates are carefully handled during storage and transportation to preserve the quality of our product in its original condition.