Gallium Telluride (GaTe) Crystal Description
Gallium Telluride (GaTe) Crystal typically crystallizes in a hexagonal lattice structure. GaTe is a semiconductor, meaning it has an intermediate electrical conductivity between that of metals and insulators. The electrical and optical properties of GaTe make it suitable for various electronic applications.
Single-crystal monoclinic GaTe (Gallium telluride) crystals come with guaranteed anisotropy and electronic, and optical grade crystal quality. They are developed at our facilities using three different growth techniques, namely Bridgman growth, chemical vapor transport (CVT), and flux zone growth, to optimize grain sizes and reduce defect concentrations.
Gallium Telluride (GaTe) Crystal Specifications
Crystal size
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>1 cm
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Material Properties
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1.65 eV direct semiconductor
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Crystal structure
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Monoclinic phase
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Unit cell parameters
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a = 0.416 nm, b = 0.934 nm, c = 1.086 nm, α = 106.05 β = 90, γ = 102.8°
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Growth method
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Bridgman Growth
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Purity
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>99.9999 %
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Gallium Telluride (GaTe) Crystal Application
- Optoelectronics: GaTe is potentially suitable for use in photodetectors and light-emitting diodes (LEDs).
- Thermoelectric Devices: The thermoelectric performance of GaTe is of interest for potential use in thermoelectric generators or coolers.
- Semiconductor Devices: As a semiconductor, GaTe could find applications in various electronic devices, such as transistors and other components in electronic circuits.
- Materials Research: GaTe and similar compounds are often studied for fundamental research purposes in materials science.
Gallium Telluride (GaTe) Crystal Packaging
Our Gallium Telluride (GaTe) Crystal is carefully handled during storage and transportation to preserve the quality of our product in its original condition.