Germanium (III) Nitride Powder (Ge3N4) Description
Germanium (III) Nitride (Ge₃N₄) Powder is a specialized material with semiconducting, dielectric, and mechanical properties. Its primary applications lie in microelectronics, optoelectronics, and protective coatings, where it provides excellent insulation, stability, and hardness. As research into germanium-based materials continues, Ge₃N₄ holds promise for advanced memory devices, thin films, and high-performance electronics in environments where chemical and thermal stability are essential.
Germanium (III) Nitride Powder (Ge3N4) Specifications
Molecular formula
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Ge3N4
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CAS No.
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12065-36-0
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Molecular weight
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273.95 g/mol
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Melting point
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>850 ℃
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Density
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5.35 g/ml at 25℃
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Solubility
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Insoluble in water, does not react with most mineral acids
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Particle size
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-100 mesh
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Purity
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5N
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Germanium (III) Nitride Powder Applications
- Used as an anti-reflection layer in integrated circuit devices
- Used in chemical vapor deposition (CVD)
Germanium (III) Nitride Powder Packing
1 kg/bag
25 kg/ drum
All packaging materials are suitable for air, sea and road freight. Great care is taken to avoid any damage which might be caused during storage or transportation.
Germanium (III) Nitride Powder FAQs
Is Germanium (III) Nitride Powder reactive with water or air?
It is chemically stable under normal conditions but should be stored in a dry, airtight container to prevent contamination.
Can Germanium (III) Nitride Powder be used in thin-film applications?
Yes, it is commonly used in thin-film deposition techniques such as chemical vapor deposition (CVD) and sputtering.
Is Germanium (III) Nitride Powder hazardous?
While it is not highly hazardous, it should be handled with care, using appropriate protective equipment to avoid inhalation or skin contact.