1100C Compact Atmosphere Controlled RTP Furnace OTF-1200X-4-RTP Description
1100C Compact Atmosphere Controlled RTP Furnace is a compact rapid thermal processing tube furnace equipped with a 4" I.D. quartz processing tube and vacuum flanges. Specifically designed for annealing semiconductor wafers or solar cells with diameters up to 3", this furnace offers precise thermal processing capabilities.
Heated by 8 units of 1 kW halogen lights, the OTF-1200X-RTP-4 boasts a maximum heating rate of 50°C/second. A 50-segment precision temperature controller with an accuracy of +/-1°C is integrated into the furnace, enabling precise control over heating, dwelling, and cooling at various process steps.
1100C Compact Atmosphere Controlled RTP Furnace OTF-1200X-4-RTP Specifications
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Features
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- Double-layer steel casing with air cooling keeps furnace surface temperature lower than 60°C.
- High-purity alumina fiber insulation for maximum energy saving.
- Split cover with Interlock protection, cut the power if lid open during furnace heating process.
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Working Temperature
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- Max. heating temperature:
1100℃ (< 10 min)
1000℃, (<20 min)
800℃, (<120 min)
- Continuous operating temperature: ≤600℃
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Basic Parameters
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- Heating element: K Type Thermocouple
- Circulating water flow rate: 0.5 m3/h
- Standard flow measurement range: 16-160 ml/min
- Digital vacuum gauge: 10-4 to 1000 torr
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Power
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208-240V AC, 12 KW, 50/60 Hz
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Temperature Control
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- FA-YD808P-AG temperature controller is included.
- Proportional–integral–derivative control (PID control) and auto-tune function
- 50 segments programmed with ramping, cooling and dwelling steps
- Built-in over-temperature alarm and thermocouple failure alarm
- +/- 1 ºC temperature control accuracy
- Default DB9 PC communication port
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Quartz Tube & Sample Holder
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- Quart Tube Size: 4.33" O.D x 4.05" I.D x 16.2" Length.
- One 3" Diameter AlN sample holder for annealing samples up to 3" Dia is included.
(AlN has a very high thermal conductivity which provides the best temperature uniformity in the sample area. The sample holder is removable from the flange for using the RTP furnace for other purposes.)
- Optional: 3'' O.D Thick Graphite Substrate (an alternative to the AIN plate)
- Optional: Graphite Crucible (87 mm OD x 71 mm ID x 12 mm Height with lid) is designed for 3" sample holder
(The crucible can also be modified into an RTE, CSS or HPCVD furnace with a graphite crucible coated with SiC.
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Overall Dimension
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- Flange (when closed): 1350 L * 330 W * 590 H mm
- Flange (when open): 1350 L * 520 W * 740 H mm
- Furnace size: φ180*190mm
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Net Weight
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70 kg
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Warranty
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- One year limited warranty with lifetime support.
- ATTENTION: Any damages caused by the use of corrosive and acidic gasses are not under the coverage of SAM One Year Limited Warranty.
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Certificate
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- CE Certified
- NRTL or CSA certification is available at extra cost.
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1100C Compact Atmosphere Controlled RTP Furnace OTF-1200X-4-RTP Applications
- Semiconductor Manufacturing: Used for the fabrication of semiconductor devices such as silicon wafers, MEMS (Micro-Electro-Mechanical Systems), and photovoltaic cells. Vertical furnaces are employed for processes including oxidation, diffusion, LPCVD (Low Pressure Chemical Vapor Deposition), and annealing.
- Thin Film Deposition: Utilized for the deposition of thin films onto substrates using techniques such as CVD (Chemical Vapor Deposition), PVD (Physical Vapor Deposition), and ALD (Atomic Layer Deposition). Vertical furnaces provide a controlled environment for precise film thickness and composition control.
- Solar Cell Production: Applied in the manufacturing of solar cells and photovoltaic modules. Vertical furnaces are used for processes such as diffusion, anti-reflection coating deposition, and metallization to enhance the efficiency and performance of solar cells.
1100C Compact Atmosphere Controlled RTP Furnace OTF-1200X-4-RTP Packaging
Our 1100C Compact Atmosphere Controlled RTP Furnace OTF-1200X-4-RTP is carefully handled during storage and transportation to preserve the quality of our product in its original condition.
