In2Se3 Crystal

Catalog No.	CY3458
Size	6-8mm Length, Thickness. 0.1-0.4mm
Growth Method	Float zone technique
Purity	＞99.995%
Lattice Constants	a=b=0.398nm，c=18.89nm，α=β=90°，γ=120°

In2Se3 Crystal is a semiconductor with a bulk single crystal bandgap of 1.41eV. Stanford Advanced Materials (SAM) has rich experience in manufacturing and supplying high-quality Optical Products.

In2Se3 Crystal Description

In2Se3 (α phase) is a semiconductor with a bulk single crystal bandgap of 1.41eV. The layers are stacked together through van der Waals force interaction and can be mechanically peeled off into a two-dimensional monolayer. The crystal is hexagonal/rectangular and has a metallic appearance.

In2Se3 Crystal Specifications

Crystal Structure	hexagonal crystal system
Size	6-8mm Length, Thickness. 0.1-0.4mm
Growth Method	Float zone technique
Purity	＞99.995
Lattice Constant	a=b=0.398nm，c=18.89nm，α=β=90°，γ=120°
Melting Point	890 ℃

In2Se3 Crystal Applications

The raw material for the preparation of indium semiconductor materials.

In2Se3 Crystal Packaging

Our In2Se3 Crystal is carefully handled during storage and transportation to preserve the quality of our product in its original condition.

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CY3458 In2Se3 Crystal

In2Se3 Crystal Description

In2Se3 Crystal Specifications

In2Se3 Crystal Applications

In2Se3 Crystal Packaging

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