Description of Indium Antimonide Wafer
Indium antimonide (InSb) is a crystalline compound made from the elements indium (In) and antimony (Sb). It is a narrow-gap semiconductor material from the III-V group used in infrared detectors, including thermal imaging cameras, FLIR systems, infrared homing missile guidance systems, and infrared astronomy. The indium antimonide detectors are sensitive between 1–5 µm wavelengths. Indium antimonide was a very common detector in the old, single-detector mechanically scanned thermal imaging systems. Another application is as a terahertz radiation source as it is a strong photo-Dember emitter.
Specifications of Indium Antimonide Wafer
Growth
|
LEC
|
Diameter
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Ø 2" / Ø 3"
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Thickness
|
500 um - 625 um
|
Orientation
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(100)+/- 0.5°
|
Off orientation
|
Off 2° to 10°
|
Surface
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One side polished or two sides polished
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Flat options
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EJ or SEMI. Std.
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Mobility
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(5.0-3.5)E5 cm2/Vs
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EPD
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<= 200 cm-2
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Grade
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Epi polished grade / mechanical grade
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Package
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Single wafer container
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Applications of Indium Antimonide Wafer
- Solar photovoltaic
- Integrated circuits
- Transistor