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IN2270 Indium Antimonide Wafer

Catalog No. IN2270
Material InSb
Thickness 500 um - 625 um
Diameter Ø 2" Ø 3"

Stanford Advanced Materials (SAM) provides a wide range of compound wafers including GaAs wafers, GaP wafers, GaSb wafers, InAs wafers, and InP wafers.

Related products: Gallium Nitride Wafer, Gallium Arsenide Wafer,  Germanium Wafer (Ge wafer)Gallium Phosphide Wafer, Indium Arsenide Wafer.

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IN2270 Indium Antimonide Wafer
IN2270 Indium Antimonide Wafer
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