CY3344 LaSrAlO4 Single Crystal Substrate

Catalog No. CY3344
Material LaSrAlO4
Density 5.92 g/cm3
Melting Point 1650 ℃
Growth Method Czochralski

LaSrAlO4 Single Crystal Substrate is used to produce films at a lower temperature to improve lattice mismatch and reduce stress. Stanford Advanced Materials (SAM) has rich experience in manufacturing and supplying high-quality crystal substrates.

Related products: Lithium Fluoride (LiF) Crystal Substrates, Potassium Tantalate (KTaO3) Crystal Substrates, LSAT Crystal Substrates

LaSrAlO4 Single Crystal Substrate Description

LaSrAlO4 Single Crystal Substrates are growing for the Czochralski method. It has no phase transition from melting temperature to a lower temperature. LaSrO4 crystal has the same structure as YBCO crystal, but It has a lower thermal expansion and expansion coefficient than other perovskite structures. So, it can be used to produce films at a lower temperature to improve lattice mismatch and reduce stress.

LaSrAlO4 Single Crystal Substrate Specifications

Growth method

Czochralski

Crystal structure

M4

Lattice constant

a=3.756
c=12.63

Density (g/cm3)

5.92

Melting point (°C)

1650 ℃

Dielectric constants

16.8

Hardness

6-6.5 (Mohns)

Size

3x3, 5x5, 10x10, 10x5, or customized

Thickness

0.1mm;0.2mm;0.5mm;1.0mm Or others

Polished

SSP or DSP

Orientation

<001>、<100>

Redirection Precision

±0.5°

Angle of Crystalline

Special size and orientation are available on demand.

Ra:

≤5Å(5µm×5µm)

LaSrAlO4 Single Crystal Substrate Applications

Used to produce films at a lower temperature to improve lattice mismatch and reduce stress.

LaSrAlO4 Single Crystal Substrate Packaging

Our LaSrAlO4 Single Crystal Substrate is carefully handled during storage and transportation to preserve the quality of our product in its original condition.

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