LaSrAlO4 Single Crystal Substrate Description
LaSrAlO4 Single Crystal Substrates are growing for the Czochralski method. It has no phase transition from melting temperature to a lower temperature. LaSrO4 crystal has the same structure as YBCO crystal, but It has a lower thermal expansion and expansion coefficient than other perovskite structures. So, it can be used to produce films at a lower temperature to improve lattice mismatch and reduce stress.

LaSrAlO4 Single Crystal Substrate Specifications
Growth method
|
Czochralski
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Crystal structure
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M4
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Lattice constant
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a=3.756 c=12.63
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Density (g/cm3)
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5.92
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Melting point (°C)
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1650 ℃
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Dielectric constants
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16.8
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Hardness
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6-6.5 (Mohns)
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Size
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3x3, 5x5, 10x10, 10x5, or customized
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Thickness
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0.1mm;0.2mm;0.5mm;1.0mm Or others
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Polished
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SSP or DSP
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Orientation
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<001>、<100>
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Redirection Precision
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±0.5°
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Angle of Crystalline
|
Special size and orientation are available on demand.
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Ra:
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≤5Å(5µm×5µm)
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LaSrAlO4 Single Crystal Substrate Applications
Used to produce films at a lower temperature to improve lattice mismatch and reduce stress.
LaSrAlO4 Single Crystal Substrate Packaging
Our LaSrAlO4 Single Crystal Substrate is carefully handled during storage and transportation to preserve the quality of our product in its original condition.