Patterned Sapphire Substrate Description
Patterned Sapphire Substrate (PSS) is a specialized micro-patterned sapphire substrate extensively utilized in the development of high-power, GaN-based Light Emitting Diodes (LEDs), which stand as a leading alternative for mainstream lighting solutions. The advancement in patterned-sapphire substrate technology has propelled the efficiency of high-brightness GaN-based LEDs to an unprecedented peak of 150 lumens per watt (lm/W). This significant boost in LED efficacy is largely attributed to enhancements in light extraction efficiency and internal quantum efficiency, thanks to the patterned-sapphire substrate technique. The meticulously designed patterns on the sapphire substrate mitigate total internal reflection at the GaN/sapphire interface, thereby improving light extraction. Furthermore, an increase in internal quantum efficiency is achieved through the reduction of threading dislocations, facilitated by the potential lateral growth of the GaN epilayer on the patterned substrate, underscoring the technique's pivotal role in advancing LED performance.
Patterned Sapphire Substrate Specifications
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Material
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Monocrystalline Al2O3
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Grade
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Prime, Epi-Ready
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Surface Orientation
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C-plane (0001)
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Diameter (mm)
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50.80 ± 0.10, 100.00 ± 0.10
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Thickness (μm)
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660 ± 10
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Primary Flat Orientation
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A-plane(11-20) +/- 0.2°
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Primary Flat Length
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16.0 mm +/- 1.0 mm
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Polishing
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Single side polished
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Total Thickness Variation (TTV)
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≤10 um
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Warp
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15um
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Purity
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>99.99%
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Pattern Width (μm)
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2.75~2.85
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Pattern Height (μm)
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1.65~1.85
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Pattern Pitch (μm)
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3.0 ± 0.05
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Patterned Sapphire Substrate SEM View
Patterned Sapphire Substrate Application
Patterned Sapphire Substrate is used in Gallium nitride (GaN)-based light-emitting diodes.
Patterned Sapphire Substrate Packaging
Our Patterned Sapphire Substrate is carefully handled during storage and transportation to preserve the quality of our product in its original condition.
