Catalog No. | SC1174 |
---|---|
Purity | SiC: 75%, Si3N4: ≥23% |
CAS Number | 1312-81-8 |
Chemical Formula | SiC/Si3N4 |
Silicon Nitrogen Bonded Silicon Carbide (NBSC) is produced by firing a mixture of high-purity silicon carbide and silicon or mineral additives in a nitrogen atmosphere. Stanford Advanced Materials (SAM) is a trusted supplier and manufacturer of Silicon Nitride Bonded Silicon Carbide (NBSC). Various shapes are available upon your request.
Related products: Silicon Carbide Tube, Silicon Carbide Nozzle, Silicon Carbide Plate, Reaction Bonded Silicon Carbide Powder
Silicon Nitrogen Bonded Silicon Carbide (NBSC) is produced by firing a mixture of high-purity silicon carbide and silicon or mineral additives in a nitrogen atmosphere. The material is well-known for its excellent wear resistance, corrosion and thermal shock resistance, even at high temperatures. NBSC also possesses ideal refractory and chemical properties. NBSC resists wetting by non-ferrous metals. It is a semiconductor at high temperatures.
Chemical Composition
Sic | 75% |
Si3N4 | ≥23% |
Free Si | 0% |
Physical Properties
Bulk density (g/cm3)
|
2.70~2.80 |
|
Apparent porosity (%)
|
12~15 |
|
Bend strength at (MPa)
|
180~190 (at 20 ℃) 207 (at 1200 ℃) 210 (at 1350 ℃) |
|
Compressive strength at 20 ℃ (MPa)
|
580 |
|
Thermal conductivity at 1200 ℃ (w/m.k)
|
19.6 |
|
Thermal expansion coefficient at 1200 ℃ (x 10-6/oC)
|
4.70 |
|
Thermal shock resistance
|
Excellent |
|
Max. temperature (℃)
|
1600 |
Our silicon nitride bonded silicon carbide products are carefully handled to minimize damage during storage and transportation and to preserve the quality of our products in their original condition.
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