SM2941 Silicon(IV) Iodide (I4Si) Powder (CAS: 13465-84-4)

Catalog No. SM2941
Molecular Formula I4Si
CAS Number 13465-84-4
Appearance White powder
Purity 99-99.999%

Silicon(IV) Iodide (I4Si) Powder (CAS: 13465-84-4) is a white powder, stable under normal temperature and pressure. SAM is a leading supplier of Silicon(IV) Iodide (I4Si) Powder across the world and enjoys rich experience in the manufacture and sale of high-quality Silicon(IV) Iodide (I4Si) Powder.

Related products: Nickel Silicide; Niobium silicide; Silicon(IV)(II) Oxide

Silicon(IV) Iodide (I4Si) Powder Description:

Silicon(IV) Iodide (I4Si) Powder (CAS: 13465-84-4) of high quality can be bought at Stanford Advanced Materials (SAM). Silicon(IV) Iodide (I4Si) Powder (CAS: 13465-84-4) is a white powder, stable under normal temperature and pressure.

Silicon(IV) Iodide (I4Si) Powder has a relative density of 4.198, a melting point of 120.5°C, and a boiling point of 287.5°C. Silicon(IV) Iodide (I4Si) Powder is soluble in carbon disulfide, easily hydrolyzed, and reacts with ethanol to produce ethyl iodide, hydrogen iodide, and silicic acid.

Silicon(IV) Iodide (I4Si) Powder Specifications:

CAS Number

13465-84-4

Molecular formula

I4Si

Molecular weight

535.70 g/mol

Density

4.198 g/cm3

Melting Point

120.5 °C, 394 K, 249 °F

Appearance

White powder


Silicon(IV) Iodide (I4Si) Powder Applications:

Silicon(IV) Iodide (I4Si) Powder is used as a precursor to prepare Silicon(IV) amides. It finds application in the manufacture and etching of Silicon(IV) in microelectronics.

Selective area regrowth of silicon-doped GaAs has been successfully achieved by chemical beam epitaxy (CBE) on dry-etched trench structures. Silicon tetraiodide is useful for the above process in abrupt to manipulate metal-semiconductor field-effect transistor (MESFET) and heterostructure field-effect transistor (HFET). Silicon iodide can also be reduced as the source to form pure silicon and hydrogen iodide.

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