CY4006 Titanium Disulfide Crsytal (TiS2 Crystal)

Catalog No. CY4006
Material TiS2
Crystal Size 5~10 mm
Crystal Structure hexagonal
Purity >99.999%

Our TiS2 Crystal is notoriously known for low impurity resistance (zero temperature resistance), high carrier mobility, extremely clean and sharp XRD peaks, and a negligible amount of defects. Stanford Advanced Materials (SAM) has rich experience in manufacturing and supplying high-quality Semiconductor Products.

Related products: SiTe2 crystal, ZrGeTe4 crystal, In2Se3 Crystal

TiS2 Crystal Description

TiS2 Crystal is stabilized in 1T semi-metallic phase and they are grown using two different techniques-chemical vapor transport (CVT) or flux zone growth. These crystals are treated as gold standards in 2D materials field owing to perfected electronic behavior with guaranteed phase transition and semi-metallic responses. Our TiS2 crystals are notoriously known for low impurity resistance (zero temperature resistance), high carrier mobility, extremely clean and sharp XRD peaks, and a negligible amount of defects.

TiS2 Crystal Specifications

Material

TiS2

Crystal Size

5~10 mm

Unit cell parameters

a = b = 0.340 nm, c = 0.570 nm, α = β = 90°, γ = 120°

Purity

>99.999%

Crystal structure

hexagonal

TiS2 Crystal Experimental Figure

TiS2 Crystal Application

It is used as Infrared materials and topological materials.

TiS2 Crystal Packaging

Our TiS2 Crystal is carefully handled during storage and transportation to preserve the quality of our product in its original condition.

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