|Type||Single crystal grains|
|Substrate Material||SiO2/Si, silicon wafer, PET, PI, ITO, FTO, glass.|
|Size||10*10, 15*15, 20*20 mm, or customized|
|Method||Chemical Vapor Deposition (CVD)|
We provide Tungsten Diselenide CVD Films on various substrates, such as: SiO2/Si, silicon wafer, PET, PI, ITO, FTO, glass. Stanford Advanced Materials (SAM) has rich experience in manufacturing and supplying high-quality Tungsten Diselenide CVD Film.
SAM provides Tungsten Diselenide CVD Films on various substrates, such as SiO2/Si, silicon wafer, PET, PI, ITO, FTO, glass.
There are many types of WSe2 films:
1) A single layer of discretely distributed triangular-shaped single-crystal grains, the side length of the triangle is generally tens to 100 microns.
2) A single-layer continuous film that continues to grow together from triangular grains.
3) Multi-layer WSe2 continuous film.
4) Substrate: WSe2 has many optional substrates, among which the sapphire substrate is a direct deposition product. Other substrates such as SiO2/Si, silicon wafer, PET, PI, ITO, FTO, glass, metal substrates, etc. are transferred to the customer's required substrate by growing on sapphire.
Optoelectronic devices, microelectronic devices, biological sensing, chemical sensing and other fields.
Our Tungsten Diselenide CVD Film (WSe2) is carefully handled during storage and transportation to preserve the quality of our product in its original condition.
WM2931 Tungsten(VI) Chloride Powder (WCl6) (CAS: 13283-01-7)
WM2932 Tungsten(VI) Oxychloride Powder (WOCl4) (CAS: 13520-78-0)
SV3682 Low Voltage Contact (AgW/AgWC)
SV3688 Vacuum Contact (WCAg)
SV3689 Epoxy Molding Compounds (EM-200)
WM3949 Ammonium Tungstate Pentahydrate (CAS No. 1311-93-9)
WM3950 Tungstosilicic Acid Hydrate (CAS No. 12027-43-9)
WM3951 Ammonium Tetramolybdate Dihydrate (CAS No. 12207-64-6)
Please fill in your details and one of our material experts will get back to you within 24 hours. For more information, contact us via E-mail at email@example.com.
** Email address with your company's domain name is preferred. Otherwise, we may not be able to process your inquiry.