BS2805 Bismuth Antimonide (BiSb) (CAS 12323-19-2)

Catalog No. BS2805

Bismuth Antimonide (BiSb) (CAS 12323-19-2) is a crystalline thermoelectric material with a cage-like crystal structure known as a skutterudite. Stanford Advanced Materials (SAM) is your one-stop platform to find antimony products for sale in a variety of forms.

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Bismuth Antimonide (BiSb) (CAS 12323-19-2) Description

Bismuth Antimonide (BiSb) (CAS 12323-19-2) is a crystalline thermoelectric material with a cage-like crystal structure known as a skutterudite. Some Bismuth Antimonides, in particular Bi0.9Sb0.1, were the first experimentally-observed three-dimensional topological insulators, materials that have conducting surface states but have an insulating interior. Various Bismuth Antimonide alloys are also used as superconduct at low temperatures, are semiconductors, and are used in thermoelectric devices.


Bismuth Antimonide (BiSb) (CAS 12323-19-2) Specifications
 

Product Name

Bismuth Antimonide

CAS No.

12323-19-2

Purity

 

Molecular Weight

330.74

Exact Mass

329.884214

 

Bismuth Antimonide (BiSb) (CAS 12323-19-2) Applications

Topological Insulator

Bismuth Antimonide (BiSb) (CAS 12323-19-2) is an important material in nano-electronics as a topological insulator – offering unique opportunities to control electric currents and magnetism, and promising material for future spintronic applications.

Superconductor

The highest temperature, at which thin film of thicknesses 150-1350A superconduct (the critical temperature Tc), is approximately 2K. Single-crystal can superconduct at slightly higher temperatures. Its critical magnetic field  (the maximum magnetic field that the superconductor can expel) of 1.6T at 4.2K

Semiconductor

At 40K, the electron mobility of Bismuth Antimonide (BiSb) ranged from 0.49*106 /Vs at an Sb concentration of 0 to .24*106 /Vs and at an Sb concentration of 7.2%. This is much greater than the electron mobility of other common semiconductors like Si, which is 1400 /Vs at room temperature. Its effective electron mass is .002me for x=.11 and .0009me at x=.06. This is much less than the electron effective mass in many common semiconductors (1.09 in Si at 300K, .55 in Ge, and .067 in GaAs). A low EEM is good for thermos-photovoltaic applications.

Thermoelectric

Bismuth Antimonides (BiSb) are used as the n-type legs in many thermoelectric devices below room temperature. At 80K, the figure of merit (zT) for  peaks at 6.5*/K when x = 15%. Also, the Seebeck coefficient (the ratio of the potential difference between ends of a material to the temperature difference between the sides) at 80K of  is -140μV/K, much smaller than the Seebeck coefficient of pure bismuth, -50μV/K

Reference

https://en.wikipedia.org/wiki/Bismuth_antimonide

 

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