GA1688 Gallium Arsenide (GaAs) (CAS No.1303-00-0)

Catalog No. GA1688
Appearance Gray cubic crystals
Melting Point 1238°C
Solubleness < 0.1
Purity ≥99.99%

Stanford Advanced Materials (SAM) has 20 years of experience manufacturing and supplying high purity Gallium Arsenide (GaAs). We have gained a strong reputation among global industries and research institutions.

Related products: Gallium Metal, Gallium Arsenide, Gallium (III) Nitrate Hydrate, Gallium Nitride, Gallium (III) Sulfide, Gallium Oxide

Gallium Arsenide (GaAs) Description

Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic. It is an important semiconductor and is used in the manufacture of devices such as microwave frequency integrated circuits, e.g., monolithic microwave integrated circuits, infrared light-emitting diodes, laser diodes, solar cells, and optical windows.
Chemical Name: Gallium arsenide
Chemical Formula: GaAs
Synonyms
Gallium arsenide (GaAs), gallium monoarsenide (GaAs), gallanylidynearsane, galliumarsenide(gaas), galliummonoarsenide, CAS# 1303-00-0, gallium arsenide pieces, gallium arsenide, 99.999% (metals basis), arsinidynegallium, gallium arsenide wafer, gallium arsenide (99.9999% Ga) puratrem 25mm and down polycrystalline pieces, GALLIUM ARSENIDE, SINGLE CRYSTAL SUBSTR, Gallium arsenide, pieces, 99.999% metals basis, Galliumarsenide(99.9999%-Ga) puratrem, GALLIUM ARSENIDE: (99.9999% GA) PURATREMECES, GALLIUM ARSENIDE WAFER - 51MM
Purity
Typical= 99.99% up to 99.999999%
Form
Splatter, ingot, wafer, pieces

Gallium Arsenide (GaAs) Specifications

Molar Mass  (g/mol)

144.645

Solubility-  (g/100 mL (20 °C)

< 0.1

Apparent Density (g/cm3)

5.316

Band Gap    eV (300 K)

1.424

Merck

14,4347

Melting Point (°C)

1238

Thermal Conductivity  W/(cm·K) (300 K)

0.55

Molecular Shape

linear

Appearance

gray cubic crystals

Crystallography

zinc blende

Gallium Arsenide (GaAs) Classification 

Gallium Arsenide Chemical Abstract Service Number: CAS# 1303-00-0
Gallium Arsenide RTECS Number: LW8800000

Gallium Arsenide (GaAs) Typical Applications 

1) GaAs has some electronic properties which are superior to those of silicon. It has a higher saturated electron velocity and higher electron mobility, allowing transistors made from it to function at frequencies in excess of 250 GHz. Unlike silicon cells, GaAs cells are relatively insensitive to heat.
2) Also, GaAs devices generate less noise than silicon devices when operated at high frequencies. They can also be operated at higher power levels than the equivalent silicon device because they have higher breakdown voltages. These properties recommend GaAs circuitry in mobile phones, satellite communications, microwave point-to-point links, and some radar systems.
3) It is used in the manufacture of Gunn diodes for the generation of microwaves.
4) Another advantage of GaAs is that it has a direct bandgap, which means that it can be used to emit light efficiently.
5) Solar cells and detectors- Another important and growing application of GaAs are for high-efficiency solar cells. Gallium arsenide (GaAs) is also known as the single-crystalline thin film and are high-cost high-efficiency solar cells.
6) In 1970, the first GaAs heterostructure solar cells were created by the team led by Zhores Alferov in the USSR.[9][10][11] In the early 1980s, the efficiency of the best GaAs solar cells surpassed that of silicon solar cells, and in the 1990s GaAs solar cells took over from silicon as the cell type most commonly used for Photovoltaic arrays for satellite applications. Later, dual- and triple-junction solar cells based on GaAs with germanium and indium gallium phosphide layers were developed as the basis of a triple junction solar cell which held a record efficiency of over 32% and can operate also with light as concentrated as 2,000 suns. This kind of solar cell powers the rovers Spirit and Opportunity, which are exploring Mars' surface.
7) Also, many solar cars utilize GaAs in solar arrays.
8) GaAs diodes can be used for the detection of X-rays.
9) Light emission devices- GaAs has been used to produce (near-infrared) laser diodes since 1962.
10) GaAs has often used as substrate material for the epitaxial growth of other III-V semiconductors including: InGaAs and GaInNAs.

Gallium Arsenide (GaAs) Packaging 

Jars, pails, drums. For further information on packaging options, please contact SAM.

Gallium Arsenide (GaAs) Powder Safety Information

Signal Word

Danger

Hazard Statements

H301 + H331-H410

Hazard Codes

T,N

Risk Codes

23/25-50/53

Safety Statements

20/21-28-45-60-61

RTECS Number

LW8800000

Transport Information

UN 1557 6.1/PG 2

WGK Germany

3

GHS Pictograms

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