sales@samaterials.com
(949) 407-8904
sales@samaterials.com
(949) 407-8904
| Catalog No. | ZN2277 |
|---|---|
| Material | ZnO |
| Crystal Structure | Hexagonal |
| Refractive Index | 2.0681/2.0510 |
SAM provides Zinc Oxide Wafer Substrates with a size of 10 x 10 x 0.5 mm, we always choose prime grade and defect-free wafer as a substrate for growing high uniformity thermal oxide layer to meet your specific requirements.
Related Products: Indium Antimonide Wafer, Silicon Carbide Wafer, Gallium Phosphide Wafer, Silicon Wafer, 1851 Germanium Wafer (Ge wafer).
With an ideal crystal structure, the ZnO Wafer Substrate (Zinc Oxide ) has a 2% lattice mismatch to GaN, which is much less than the lattice mismatch of the sapphire wafer and SiC wafer. ZnO wafer substrate is one of the most suitable substrates for use as GaN epitaxial growth and wide bandgap semiconductor application. ZnO wafer substrate is supplied in a square shape, undoped, size 10 x 10 x 0.5 mm, double sides polished surface finish and <0001> oriented, our high-quality ZnO wafer substrate has been widely used for the growth of nitride-based devices.
|
Chemical formula |
ZnO |
|
Crystal structure |
Hexagonal |
|
Lattice constant |
3.3 A |
|
Lattice mismatch with GaN in <0001> plane |
9 |
|
Thermal conductivity |
0.006 cal / cm /K |
|
Refractive index |
2.0681 / 2.0510 |
|
Identified polished face |
Zn-face/O-face |
- Semiconductor circuit substrate
- ZnO LED
- ZnO film
Please fill in your details and one of our material experts will get back to you within 24 hours. For more information, contact us via E-mail at sales@samaterials.com.
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