Indium arsenide, InAs, or indium monoarsenide, is a semiconductor material, a semiconductor composed of indium and arsenic. It has the appearance of grey cubic crystals with a melting point of 942 °C.
Indium(III) arsenide; Indium monoarsenide; Indium arsenide; Indium monoarsenide (InAs); indium arsenide; indium-arsenide (InAs); Indium arsenide, 99% (metals basis); Indium arsenide, 99.9999% (metals basis); Indium arsenide quantum dots, Arsinetriylindium(III); indiganylidynearsane; CAS# 1303-11-3.
Powder, ingot, chunk, lump, target, nanowire, Indium arsenide quantum dots
There’s good news in the search for the next generation of semiconductors. Researchers with the U.S. Department of Energy’s Lawrence Berkeley National Laboratory (Berkeley Lab) and the University of California (UC) Berkeley, have successfully integrated ultra-thin layers of the semiconductor indium arsenide onto a silicon substrate to create a nanoscale transistor with excellent electronic properties. A member of the III–V family of semiconductors, indium arsenide offers several advantages as an alternative to silicon including superior electron mobility and velocity, which makes it an outstanding candidate for future high-speed, low-power electronic devices. Date: November 2010.
Indium arsenide is used for the construction of infrared detectors, for the wavelength range of 1–3.8 µm. The detectors are usually photovoltaic photodiodes. Cryogenically cooled detectors have lower noise, but InAs detectors can be used in higher-power applications at room temperature as well. Indium arsenide is also used for making of diode lasers.
Indium arsenide is similar to gallium arsenide.
Indium arsenide is sometimes used together with indium phosphide. Alloyed with gallium arsenide it forms indium gallium arsenide - a material with band gap dependent on In/Ga ratio, a method principally similar to alloying indium nitride with gallium nitride to yield indium gallium nitride.
InAs is well known for its high electron mobility and narrow energy bandgap. It is widely used as a terahertz radiation source as it is a strong Photo-dember emitter.
Quantum dots can be formed in a monolayer of indium arsenide on indium phosphide or gallium arsenide. The mismatches of lattice constants of the materials create tensions in the surface layer, which in turn leads to the formation of the quantum dots. Quantum dots can also be formed in indium gallium arsenide, as indium arsenide dots sitting in the gallium arsenide matrix.
Band Gap (eV (300 K))
Bulk Modulus (·1011 dyn cm-2)
Melting Range (°C)
~542 - 936
Electrton Mobility (cm2/(V*s))
Thermal Conductivity (W/cm·K) (300K)
Dielectric Constant (static)
Refractive Index (nD)
Specific Heat Capacity (J·mol-1·K-1 )
Indium Arsenide (InAs) Packaging: Packing Group= III; UN Number 1557
Indium Arsenide (InAs) TSCA (SARA Title III) Status: Listed. Acute toxicity
Indium Arsenide (InAs) Product Safety Information: EU Classification: Toxic (T) and Dangerous for the environment (N)A
Indium Arsenide (InAs) CAS Number: CAS# 1303-11-3
Indium Arsenide (InAs) Proper Shipping Name: Arsenic compound, solid, n.o.s., indium arsenide