IN2271 Indium Arsenide Wafer

Catalog No. IN2271
Material InAs
Thickness 500 um- 625 um
Conductive Type N - type/ P- type
Diameter Ø 2" Ø 3"

Stanford Advanced Materials (SAM) provides high quality single crystal InAs wafer (Indium Arsenide) to the electronic and optoelectronic industry in diameter up to 3 inches.

Related products:  Gallium Nitride WaferSapphire WaferSilicon Carbide WaferSilicon WaferGallium Arsenide Wafer,  Germanium Wafer (Ge wafer).

Description of Indium Arsenide Wafer

InAs crystal is a compound formed by 6N pure In and As element and is grown by Liquid Encapsulated Czochralski (LEC) method with EPD < 15000 cm -3. InAs crystal has high uniformity of electrical parameters and low defect density, suitable for MBE or MOCVD epitaxial growth. We have "epi ready” InAs products with a wide choice in exact or off orientation, low or high doped concentration, and surface finish. Please contact us for more product information.

 

Specifications of Indium Arsenide Wafer

Growth

LEC

Diameter

Ø 2" / Ø 3"

Thickness

500 um - 625 um

Orientation

<100> / <111> / <110> or others

Off orientation

Off 2° to 10°

Surface

One side polished or two sides polished

Flat options

EJ or SEMI. Std .

TTV

<= 10 um

EPD

<= 15000 cm-2

Grade

Epi polished grade / mechanical grade

Package

Single wafer container

 

Applications of Indium Arsenide Wafer

- Used in higher-power applications at room temperature
- Used for making of diode lasers
- Construction of infrared detectors

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sc/1623318154-normal-in2se3-crystal.jpg

CY3458 In2Se3 Crystal

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