CY2174 Silicon Wafer

Catalog No. CY2174
Material Si
Thickness 275 um ~ 775 um
Conductive Type N - type / Semi-insulating
Diameter Ø 2" / Ø 3" / Ø 4" / Ø 6" / Ø 8" / Ø 12"
Electrical Resistance (µOhm-cm) 0.01 ~ 10000 ohm-cm
Growth CZ / FZ

SAM produces any diameters from 2’’ (50.8 mm) to 12’’ (304.8mm) in order to provide the most flexibility as possible. With the aim of providing the largest range of specifications, we work either Cz (Czochralski) or FZ (Float Zone) silicon wafers.

Related products: Gallium Arsenide Wafer, Gallium Nitride Wafer, Sapphire Wafer, Silicon Carbide Wafer, Germanium Wafer (Ge wafer).

Description of Silicon Wafer

Silicon wafer is a material used for producing semiconductors, which can be found in all types of electronic devices that improve the lives of people. It is the most common material and widely used for a variety of high-tech industries. Due to the uniqueness of the electrical currents via silicon wafers, these semiconductors are used in creating ICs (integrated circuits) to act as commands for specific actions in various electronic devices.

Specifications of Silicon Wafer

Growth 

CZ / FZ

Diameter

Ø 2" / Ø 3" / Ø 4" / Ø 6" / Ø 8" / Ø 12"

Thickness

275 um ~ 775 um

Orientation

<100> / <111> / <110> or others

SIIConductivity

P - type / N - type / intrinsic

Dopant

Boron / Phosphorous / Antimony / Arsenic

Resistivity

0.001 ~ 10000 ohm-cm

Surface

One side polished / two sides polished

TTV

<= 10 um

Bow / Warp

<= 40 um

Grade

Prime / Test / Dummy grade


Available Silicon Wafer

CZ or FZ Wafer

Prime Wafer

Intrinsic Wafer

Test Wafer

Heavily Doped Wafer

High Resistivity Wafer

Off Axis Orientation Wafer

Special Orientation Wafer

Ultra Flat Wafer

Ultra-Thin Wafer

Ultra Thick Wafer

Double Sides Polished

Thermal Oxide Wafer

Epi Wafer


Applications of Silicon Wafer

- Discrete
- Power device
- PW transistor IGBT
- MOS IC
- MEMS
- Solar cells

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