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NR2172 Gallium Nitride Wafer

Catalog No. NR2172
Material GaN
Thickness 300-450um
Conductive Type N - type
Diameter Ø 2" / Ø 4" /Ø 6"
Electrical Resistance (µOhm-cm) < 0.5 Ω·cm

Stanford Advanced Materials (SAM) produces any diameters in order to provide the most flexibility as possible. With the aim of providing the largest range of specifications, we work either undoped or doped gallium nitride wafers.

Related products: Gallium Arsenide Wafer, Sapphire Wafer, Silicon Carbide Wafer, Silicon Wafer, Germanium Wafer (Ge wafer).

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NR2172 Gallium Nitride Wafer
NR2172 Gallium Nitride Wafer
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Technical Data Sheet

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