NR2172 Gallium Nitride Wafer

Catalog No. NR2172
Material GaN
Thickness 300-450um
Conductive Type N - type
Diameter Ø 2" / Ø 4" /Ø 6"
Electrical Resistance (µOhm-cm) < 0.5 Ω·cm

Stanford Advanced Materials (SAM) produces any diameters in order to provide the most flexibility as possible. With the aim of providing the largest range of specifications, we work either undoped or doped gallium nitride wafers.

Related products: Gallium Arsenide Wafer, Sapphire Wafer, Silicon Carbide Wafer, Silicon Wafer, Germanium Wafer (Ge wafer).

Description of Gallium Nitride Wafer

Gallium Nitride (GaN) is widely used as a substrate mainly for the light-emitting diode (blue color LED, violet color LED, ultraviolet LED and white color LED) and blue-violet color laser diode for blue ray.

Specifications of Gallium Nitride Wafer

Conductivity type

 N-Type (undoped)

Size

ϕ 101.6 ± 0.1 mm (4 inch diameter)

Useable area

 >90%

Orientation

C plane (0001) ± 0.5°

Orientation Flat

(1-100) ± 0.5°, 16.0 ± 1.0 mm

Secondary Orientation flat

 (11-20) ± 3°, 8.0 ± 1.0 mm

Total Thickness Variation

<15 μm

Resistivity (300K)

< 0.5 Ω·cm

Dislocation Density

< 5x10^8 cm^-2 


Applications of Gallium Nitride Wafer

- Light-emitting diode
- Blue violent color laser diode for blue way
- LED, LD device

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