CY2173 Sapphire Wafer

Catalog No. CY2173
Material Al2O3
Thickness 430mm, 0.5mm, 1mm
Diameter Ø 1" /Ø 2" / Ø 3" / Ø 4"/ Ø6"
Thermal Conductivity 46 W/mk
Dielectric constant 11.58

Stanford Advanced Materials (SAM) produces any diameters from 1’’ (25.4 mm) to 5’’ (152.4mm) in order to provide the most flexibility as possible. We can offer complete orientation options including C plane, A plane, R plane and M plane.

Related products: Gallium Arsenide Wafer, Gallium Nitride Wafer, Silicon Carbide Wafer, Silicon Wafer, Germanium Wafer (Ge wafer).

Description of Sapphire Wafer

Comparing to other wafers, the sapphire wafer has many unique features such as high strength, anti-corrosion, anti-abrasion, good thermal conductivity, and good electrical isolation. Due to its excellent mechanical and chemical characteristics, the sapphire wafer plays an important role in the optoelectronics industry and widely used in precision mechanical parts and vacuum equipment.

Specifications of Sapphire Wafer

Growth

Kyroplous

Diameter

Ø 1" / Ø 2" / Ø 3" / Ø 4"/ Ø 6"

Size

10 x 10 / 20 x 20 / 50 x 50 / 100 x 100 mm

Thickness

0.43 mm / 0.5 mm  / 1 mm

Surface

one side / two sides epi polished

Roughness

Ra ≤ 5 A

Package

Single wafer container or Ampak cassette

 

Chemical formula

Al2O3

Crystal structure

Hexagonal

Lattice constant

4.77 A

Hardness

9

Thermal conductivity

46 W / mk

Dielectric constant

11.58

Refractive index

1.768


Applications of Sapphire Wafer

- High-frequency device
- High power device
- GaN epitaxy device
- High-temperature device
- Optoelectronic device
- Light-emitting diode

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