sales@samaterials.com
(949) 407-8904
sales@samaterials.com
(949) 407-8904
| Catalog No. | CY2173 |
|---|---|
| Material | Al2O3 |
| Thickness | 430mm, 0.5mm, 1mm |
| Diameter | Ø 1" /Ø 2" / Ø 3" / Ø 4"/ Ø5" |
| Thermal Conductivity | 46 W/mk |
| Dielectric constant | 11.58 |
Stanford Advanced Materials (SAM) produces any diameters from 1’’ (25.4 mm) to 5’’ (152.4mm) in order to provide the most flexibility possible. We can offer complete orientation options including C plane, A plane, R plane, and M plane.
Related products: Gallium Arsenide Wafer, Gallium Nitride Wafer, Silicon Carbide Wafer, Silicon Wafer, Germanium Wafer (Ge wafer).
Comparing to other wafers, the sapphire wafer has many unique features such as high strength, anti-corrosion, anti-abrasion, good thermal conductivity, and good electrical isolation. Due to its excellent mechanical and chemical characteristics, the sapphire wafer plays an important role in the optoelectronics industry and widely used in precision mechanical parts and vacuum equipment.
|
Growth |
Kyroplous |
|
Diameter |
Ø 1" / Ø 2" / Ø 3" / Ø 4"/ Ø 5" |
|
Size |
10 x 10 / 20 x 20 / 50 x 50 / 100 x 100 mm |
|
Thickness |
0.43 mm / 0.5 mm / 1 mm |
|
Surface |
one side / two sides epi polished |
|
Roughness |
Ra ≤ 5 A |
|
Package |
Single wafer container or Ampak cassette |
|
Chemical formula |
Al2O3 |
|
Crystal structure |
Hexagonal |
|
Lattice constant |
4.77 A |
|
Hardness |
9 |
|
Thermal conductivity |
46 W / mk |
|
Dielectric constant |
11.58 |
|
Refractive index |
1.768 |
- High-frequency device
- High power device
- GaN epitaxy device
- High-temperature device
- Optoelectronic device
- Light-emitting diode
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AL2665 Aluminum Metaphosphate Powder (CAS 13776-88-0)
AL2746 Aluminum Sulfide Powder & Lump (CAS NO. 1302-81-4)
AL2804 Aluminum Selenide (CAS 1302-82-5)
AL3258 Electrostatic Chuck (Al2O3, AlN, Sapphire)
Please fill in your details and one of our material experts will get back to you within 24 hours. For more information, contact us via E-mail at sales@samaterials.com.
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