Catalog No. | CY2173 |
---|---|
Material | Al2O3 |
Thickness | 430mm, 0.5mm, 1mm |
Diameter | Ø 1" /Ø 2" / Ø 3" / Ø 4"/ Ø6" |
Thermal Conductivity | 46 W/mk |
Dielectric constant | 11.58 |
Stanford Advanced Materials (SAM) produces any diameters from 1’’ (25.4 mm) to 5’’ (152.4mm) in order to provide the most flexibility as possible. We can offer complete orientation options including C plane, A plane, R plane and M plane.
Related products: Gallium Arsenide Wafer, Gallium Nitride Wafer, Silicon Carbide Wafer, Silicon Wafer, Germanium Wafer (Ge wafer).
Comparing to other wafers, the sapphire wafer has many unique features such as high strength, anti-corrosion, anti-abrasion, good thermal conductivity, and good electrical isolation. Due to its excellent mechanical and chemical characteristics, the sapphire wafer plays an important role in the optoelectronics industry and widely used in precision mechanical parts and vacuum equipment.
Growth |
Kyroplous |
Diameter |
Ø 1" / Ø 2" / Ø 3" / Ø 4"/ Ø 6" |
Size |
10 x 10 / 20 x 20 / 50 x 50 / 100 x 100 mm |
Thickness |
0.43 mm / 0.5 mm / 1 mm |
Surface |
one side / two sides epi polished |
Roughness |
Ra ≤ 5 A |
Package |
Single wafer container or Ampak cassette |
Chemical formula |
Al2O3 |
Crystal structure |
Hexagonal |
Lattice constant |
4.77 A |
Hardness |
9 |
Thermal conductivity |
46 W / mk |
Dielectric constant |
11.58 |
Refractive index |
1.768 |
- High-frequency device
- High power device
- GaN epitaxy device
- High-temperature device
- Optoelectronic device
- Light-emitting diode
CY2534 Ce:Lu2SiO5 Single Crystal Substrates
CY2535 Boron Nitride (BN) Single Crystal Substrates
CY2536 Silicon-Germanium (Si-Ge) Single Crystal Substrates
CY2538 Bismuth Telluride (Bi2Te3) Single Crystal Substrates
AL2549 Potassium Hexafluoroaluminate Powder (CAS 13775-52-5)
AL2665 Aluminum Metaphosphate Powder (CAS 13776-88-0)
AL2746 Aluminum Sulfide Powder & Lump (CAS NO. 1302-81-4)
AL2804 Aluminum Selenide (CAS 1302-82-5)
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