Sapphire Wafer Supplier | Stanford Advanced Materials

Catalog No.	CY2173
Material	Al2O3
Thickness	430mm, 0.5mm, 1mm
Diameter	Ø 1" /Ø 2" / Ø 3" / Ø 4"/ Ø6"
Thermal Conductivity	46 W/mk
Dielectric constant	11.58

Stanford Advanced Materials (SAM) produces any diameters from 1’’ (25.4 mm) to 5’’ (152.4mm) in order to provide the most flexibility as possible. We can offer complete orientation options including C plane, A plane, R plane and M plane.

Description of Sapphire Wafer

Comparing to other wafers, the sapphire wafer has many unique features such as high strength, anti-corrosion, anti-abrasion, good thermal conductivity, and good electrical isolation. Due to its excellent mechanical and chemical characteristics, the sapphire wafer plays an important role in the optoelectronics industry and widely used in precision mechanical parts and vacuum equipment.

Specifications of Sapphire Wafer

Growth	Kyroplous
Diameter	Ø 1" / Ø 2" / Ø 3" / Ø 4"/ Ø 6"
Size	10 x 10 / 20 x 20 / 50 x 50 / 100 x 100 mm
Thickness	0.43 mm / 0.5 mm / 1 mm
Surface	one side / two sides epi polished
Roughness	Ra ≤ 5 A
Package	Single wafer container or Ampak cassette

Chemical formula	Al2O3
Crystal structure	Hexagonal
Lattice constant	4.77 A
Hardness	9
Thermal conductivity	46 W / mk
Dielectric constant	11.58
Refractive index	1.768

Applications of Sapphire Wafer

- High-frequency device
- High power device
- GaN epitaxy device
- High-temperature device
- Optoelectronic device
- Light-emitting diode

CY2173 Sapphire Wafer

Description of Sapphire Wafer

Specifications of Sapphire Wafer

Applications of Sapphire Wafer

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