sales@samaterials.com
(949) 407-8904
sales@samaterials.com
(949) 407-8904
| Catalog No. | CY2175 |
|---|---|
| Material | SiC |
| Thickness | 260 um ~ 500 um |
| Conductive Type | N - type / Semi-insulating |
| Diameter | Ø 1" /Ø 2" / Ø 3" / Ø 4"/ Ø 6" |
| Polytype | 4H / 6H |
| Resistivity ( SI ) | > 1E5 ohm-cm |
SAM is a global manufacturer of Silicon Carbide Wafer. With our rich experience and knowledge in the wafer industry, you can be confident in making SAM your first choice.
Related products: Gallium Arsenide Wafer, Gallium Nitride Wafer, Sapphire Wafer, Silicon Wafer, Germanium Wafer (Ge wafer).
As a next-generation semiconductor material, silicon carbide (SiC) wafer has unique electrical properties and excellent thermal properties. The sic-based device has been used for short-wavelength optoelectronic, high-temperature, radiation-resistant applications. In the applications of high power and high temperature, SiC wafer is more suitable compared to the silicon wafer and GaAs wafer.
|
Polytype |
4H / 6H |
|
Diameter |
Ø 1" / Ø 2" / Ø 3" / Ø 4"/ Ø 6" |
|
Thickness |
260 um ~ 500 um |
|
Orientation |
On axis <0001> / Off axis <0001> off 4° |
|
Conductivity |
N - type / Semi-insulating |
|
Dopant |
N2 ( Nitrogen ) / V ( Vanadium ) |
|
Resistivity ( 4H-N ) |
0.015 ~ 0.03 ohm-cm |
|
Resistivity ( 6H-N ) |
0.02 ~ 0.1 ohm-cm |
|
Resistivity ( SI ) |
> 1E5 ohm-cm |
|
Surface |
CMP polished + One side polished or two sides polished |
|
TTV |
≤ 15 um |
|
Bow / Warp |
≤ 25 um |
|
Grade |
Production grade / Research grade |
|
Polytype |
6H-SiC |
4H-SiC |
|
Crystal stacking sequence |
ABCABC |
ABCB |
|
Lattice parameter |
a=3.073A , c=15.117A |
a=3.076A , c=10.053A |
|
Band-gap |
3.02 eV |
3.27 eV |
|
Dielectric constant |
9.66 |
9.6 |
|
Refraction Index |
n0 =2.707 , ne =2.755 |
n0 =2.719 ne =2.777 |
- High-frequency device
- High power device
- GaN epitaxy device
- High-temperature device
- Optoelectronic device
- Light-emitting diode
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