CY2175 Silicon Carbide Wafer

Catalog No. CY2175
Material SiC
Thickness 330 um ~ 500 um
Conductive Type N - type / Semi-insulating
Diameter Ø 2" / Ø 3" / Ø 4"/ Ø 6"
Polytype 4H / 6H
Resistivity ( SI ) > 1E5 ohm-cm

SAM is a global manufacturer of Silicon Carbide Wafer. With our rich experience and knowledge in the wafer industry, you can be confident in making SAM your first choice.

Related products: Gallium Arsenide Wafer, Gallium Nitride Wafer, Sapphire Wafer, Silicon Wafer, Germanium Wafer (Ge wafer).

Description of Silicon Carbide Wafer

As a next-generation semiconductor material, silicon carbide (SiC) wafer has unique electrical properties and excellent thermal properties. The sic-based device has been used for short-wavelength optoelectronic, high temperature, radiation resistant applications. In the applications of high power and high temperature, SiC wafer is more suitable compared to the silicon wafer and GaAs wafer.

Specifications of Silicon Carbide Wafer

Polytype

4H / 6H

Diameter

Ø 2" / Ø 3" / Ø 4"/ Ø 6"

Thickness

330 um ~ 500 um

Orientation

On axis <0001> / Off axis <0001> off 4°

Conductivity

N - type / Semi-insulating

Dopant

N2 ( Nitrogen ) / V ( Vanadium )

Resistivity  ( 4H-N )

0.015 ~ 0.03 ohm-cm

Resistivity  ( 6H-N )

0.02 ~ 0.1 ohm-cm

Resistivity  ( SI )

> 1E5 ohm-cm

Surface

CMP polished

TTV

≤ 15 um

Bow / Warp

≤ 25 um

Grade

Production grade / Research grade

 

Polytype

6H-SiC

4H-SiC   

Crystal stacking sequence

ABCABC

ABCB

Lattice parameter

a=3.073A , c=15.117A

a=3.076A , c=10.053A

Band-gap

3.02 eV

3.27 eV

Dielectric constant

9.66

9.6

Refraction Index

n0 =2.707 , ne =2.755

n0 =2.719 ne =2.777


Applications of Silicon Carbide Wafer

- High-frequency device
- High power device
- GaN epitaxy device
- High-temperature device
- Optoelectronic device
- Light-emitting diode

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