GA2171 Gallium Arsenide Wafer

Catalog No. GA2171
Material GaAs
Thickness 350 um ~ 625 um
Conductive Type P - type / N - type / Semi-insulating
Diameter Ø 2" / Ø 3" / Ø 4"
Polytype 4H / 6H

Stanford Advanced Materials (SAM) offer single crystal GaAs wafer produced by two main growth techniques LEC and VGF method, allowing us to provide customers the widest choice of GaAs material with high uniformity of electrical properties and excellent surface quality.

Related products: Gallium Nitride Wafer, Sapphire Wafer, Silicon Carbide Wafer, Silicon Wafer, Germanium Wafer (Ge wafer).

Description of Gallium Arsenide Wafer

Gallium Arsenide (GaAs) crystal has good chemical stability, hardness and is resistant to harsh environments. GaAs can be supplied as ingots and polished wafers, both conducting and semi-insulating GaAs wafer, mechanical grade, and epi ready grade are all available.

gallium arsenide wafer

Specifications of Gallium Arsenide Wafer

Growth

LEC /  VGF

Diameter

Ø 2" / Ø 3" / Ø 4"

Thickness

350 um ~ 625 um

Orientation

<100> / <111> / <110> or others

Conductivity

P - type / N - type / Semi-insulating

Dopant

Zn / Si / undoped

Surface

One side polished or two sides polished

Concentration

1E17 ~ 5E19 cm-3

TTV

<= 10 um

Bow / Warp

<= 20 um

Grade

Epi polished grade / mechanical grade


Applications of Gallium Arsenide Wafer

- Light-emitting diodes
- Laser diodes
- Photovoltaic devices
- High Electron Mobility Transistor
- Heterojunction Bipolar Transistor

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