Silicon Nitride Electrical Insulator

Catalog No.	SC1936
Color	Grey
Density	3.21 g/cm3
Flexural Strength	800 MPa
Fracture toughness	6.5 MPam 1/2
Thermal stress parameters	569 K

Catalog No.

SC1936

Color

Grey

Density

3.21 g/cm3

Flexural Strength

800 MPa

Fracture toughness

6.5 MPam 1/2

Thermal stress parameters

569 K

Description of Silicon Nitride Electrical Insulator

Due to the even performance in high temperature, Si3N4 is a commonly used ceramic material in the metallurgical industry. It has excellent thermal shock resistance due to the microstructure. The creep and oxidation resistance of Si3N4 is also superior, its low thermal conductivity and high wear resistance also make it an outstanding material that can withstand conditions of most industrial applications.

With low thermal conductivity and resistance to attack by many molten metals, Si3N4 electrical insulator is used in many RF heating applications. Comparing to other conventional insulator materials, Si3N4 electrical insulator has higher strength and thermal shock resistance, which is also an ideal insulator for aerospace applications.

There are 5 different methods to produce Silicon Nitride including SRBSN, GPSN, HPSN, HIP-SN and RBSN, make the application and working material different slightly. In these 5 methods of production, GPSN is most commonly used to produce Si3N4 components.

Silicon Nitride Electrical Insultor

Specifications of Silicon Nitride Electrical Insulator

GPSN

Property	Unit
Color		Grey
Mechanical Properties
Density	g/cm3	3.21
Compressive Strength	MPa	3000
Flexural Strength	MPa	800
Weibull-Modulus m		15
Fracture Toughness KIc	MPa m^1/2	6.5
Young‘s Modulus E	GPa	320
Poisson Ratio		0.28
Hardness Vickers (HV 1)	GPa	16
Thermal Properties
Maximum Temperature
Inert Gas	°C	1200
Air	°C	1100
Thermal Conductivity		25
@ 20°C	W/mK	28
@ 1000	W/mK	16
Thermal Expansion
20–100°C	10-6/K	2
20–1000°C	10-6/K	3.5
Thermal Shock parameter R1	K	600
Thermal Shock parameter R2	W/mm	15
Electrical Properties
Resistivity at 20°C	Ωcm	10^12
Resistivity at 800°C	Ωcm	10^7
Dielectric constant	1 MHz	6