Silicon Nitride Welding Pins | Stanford Advanced Materials

Catalog No.	SC1943
Color	Grey
Density	3.21 g/cm3
Flexural Strength	800 MPa
Fracture toughness	6.5 MPam 1/2
Thermal stress parameters	569 K

Stanford Advanced Materials (SAM) can supply full ceramic parts made by Silicon Nitride as well as Silicon Carbide. Feel free to contact us for customized products.

Description of Silicon Nitride Welding Pins

Due to the even performance in high temperatures, Si3N4 is a commonly used ceramic material in the metallurgical industry. It has excellent thermal shock resistance due to the microstructure. The creep and oxidation resistance of Si3N4 is also superior, its low thermal conductivity and high wear resistance also make it an outstanding material that can withstand conditions of most industrial applications.

Si3N4 welding pins

These Si3N4 welding pins are especially for use in projection welding. Features of these welding pins:

- High tensile strength and compressive

- Extreme hardness and flexural strength

- High thermal shock resistance

- Electrical insulation

- Temperature resistance

- Fewer cold welds

- No welding spatter adhesion

There are 5 different methods to produce Silicon Nitride including SRBSN, GPSN, HPSN, HIP-SN, and RBSN, make the application and working material different slightly. In these 5 methods of production, GPSN is most commonly used to produce Si3N4 components.

Specifications of Silicon Nitride Welding Pins

GPSN

Property		Unit
Color	Grey
Mechanical Properties
Density	3.21	g/cm3
Compressive Strength	3000	MPa
Flexural Strength	800	MPa
Weibull-Modulus m	15
Fracture Toughness KIc	6.5	MPa m^1/2
Young‘s Modulus E	320	GPa
Poisson Ratio	0.28
Hardness Vickers (HV 1)	16	GPa
Thermal Properties
Maximum Temperature
Inert Gas	1200	°C
Air	1100	°C
Thermal Conductivity	25
@ 20°C	28	W/mK
@ 1000	16	W/mK
Thermal Expansion
20–100°C	2	10-6/K
20–1000°C	3.5	10-6/K
Thermal Shock parameter R1	600	K
Thermal Shock parameter R2	15	W/mm
Electrical Properties
Resistivity at 20°C	10^12	Ωcm
Resistivity at 800°C	10^7	Ωcm
Dielectric constant	6	1 MHz