SC2275 Silicon Thermal Oxide Wafer

Catalog No. SC2275
Material SiO2/Si
Diameter Ø 2" / Ø 3" / Ø 4" / Ø 6" / Ø 8" / Ø 12"
Refractive Index 1.456

SAM provides Silicon Thermal Oxide Wafer in diameter from 2" to 12", we always choose prime grade and a defect-free silicon wafer as the substrate for growing high uniformity thermal oxide layer to meet your specific requirements.

Related Products: Indium Antimonide Wafer, Silicon Carbide Wafer, Gallium Phosphide Wafer, Silicon Wafer, 1851 Germanium Wafer (Ge wafer).

Description of Silicon Thermal Oxide Wafer

The Thermal Oxide Silicon Wafer is the growth of an oxide layer (SiO2) on a silicon wafer, also name SiO2/Si wafer.  Thermal oxide is a kind of "grown" oxide layer, compared to CVD deposited oxide layer, it has a higher uniformity, and higher dielectric strength, it is an excellent dielectric layer as an insulator. In most silicon-based devices, the thermal oxide layer plays an important role to pacify the silicon surface to act as doping barriers and as surface dielectrics.

silicon-thermal-oxide-wafer

 

Specifications of Silicon Thermal Oxide Wafer

Oxidation technique

Wet oxidation or Dry oxidation

Diameter

Ø 2" / Ø 3" / Ø 4" / Ø 6" / Ø 8" / Ø 12"

Oxide thickness

100 A ~ 6 um

Tolerance

+/- 5%

Surface

Single side or double sides oxide layer

Furnace

Horizontal tube furnace

Gase

Hydrogen and Oxygen gases

Temperature

900 °C - 1200 °C

Refractive index

1.456

 

Applications of Silicon Thermal Oxide Wafer

The Thermal Oxide SiO2 Layer is not only a masking layer for ion implantation or thermal diffusion, and also a passivation layer that protects the surface of the device from the surrounding environment. It's not just an electrically isolated insulation between the device and another device. It is also a major component of MOS processes and electrical isolation in multilayer metallization systems.

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