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  • SC2276 SOI Wafer

    • SC2276 SOI Wafer

    Catalog No. SC2276
    Material Si
    Diameter 2'' to 12''
    Dopant Boron/Phosphorous/Antimony/Arsenic
    Conductivity P-type/N-type / Intrinsic

    SAM provides Silicon Thermal Oxide Wafer in diameter from 2" to 12", we always choose prime grade and a defect-free silicon wafer as a substrate for growing high uniformity thermal oxide layer to meet your specific requirements.

    Related Products: Indium Antimonide Wafer, Silicon Carbide Wafer, Gallium Phosphide Wafer, Silicon Wafer, 1851 Germanium Wafer (Ge wafer).

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    SC2276 SOI Wafer
    SC2276 SOI Wafer
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