CY3435 AlN Single Crystal Substrate

Catalog No. CY3435
Compositions AlN
Dimensions 10x10 mm
Thickness 450 ± 50μm
Surface finish Al face: CMP polish (RMS < 0.8 nm); N face: optical polish (RMS < 3 nm)
Orientation <0001>± 1°
Usable Area >80%

AlN Single Crystal Substrate is a wide bandgap semiconductor material with exceptional characteristics. Stanford Advanced Materials (SAM) has rich experience in manufacturing and supplying high-quality Optical Products.

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AlN Single Crystal Substrate Description

AlN single crystal substrate is a wide bandgap semiconductor material with exceptional characteristics.

The band gap is 6.2eV and has a direct band gap. It is an important blue and ultraviolet light-emitting material; High thermal conductivity, high melting point, high resistivity, strong breakdown field and low dielectric coefficient. It is an excellent electronic material for high temperature, high frequency and high-power devices; AlN oriented along the c-axis has very good piezoelectricity and high-speed propagation properties of surface acoustic waves, and is an excellent piezoelectric material for surface acoustic wave devices.

In view of the excellent physical properties of the above-mentioned AlN materials, AlN crystals are ideal substrates for GaN, AlGaN and AlN epitaxial materials. Compared with sapphire or SiC substrates, AlN and GaN have higher thermal matching and chemical compatibility, and the stress between the substrate and the epitaxial layer is smaller. Therefore, when AlN crystal is used as a GaN epitaxial substrate, the defects in the device can be greatly reduced Density, improve the performance of the device, have a good application prospect in the preparation of high temperature, high frequency, high power electronic devices

AlN Single Crystal Substrate Specifications

Composition (Cubic)

AlN

Usable Area

>80%

Edge exclusion

1.0 mm

Dimension

10x10 mm

Thickness

450 ± 50μm

Absorption coefficient

< 80 cm-1

Etch pit density (EPD)

< 1E5 cm-2

Surface finish

Al face: CMP polish (RMS < 0.8 nm)

N face: optical polish (RMS < 3 nm)

Orientation

<0001>± 1°

AlN Single Crystal Substrate Applications

Widely used in the preparation of high temperature, high frequency, high power electronic devices

AlN Single Crystal Substrate Packaging

Our AlN Single Crystal Substrate is carefully handled during storage and transportation to preserve the quality of our product in its original condition.

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