CY3528 ZrGeTe4 crystal

Catalog No. CY3528
Material ZrGeTe4
Size 4-5mm in size
Crystal Structure Tetragonal phase
Production Method Flux zone

ZrGeTe4 crystal is a layered anisotropic semiconductor with the predicted bandgap of 0.4 eV. Stanford Advanced Materials (SAM) has rich experience in manufacturing and supplying high-quality Semiconductor Products.

Related products: SbTe crystal, HfTe5 crystal, NbTe4 crystal, SiTe2 crystal

ZrGeTe4 crystal Description

ZrGeTe4 crystal is a layered anisotropic semiconductor with the predicted bandgap of 0.4 eV. While it is layered and can be exfoliated down to few- or monolayers, their properties remain largely unknown. Our ZrGeTe4 vdW crystals are synthesized by using flux zone growth technique at unparalleled 99.9999%. Crystals are cut in c-axis and thus are ready to exfoliate onto desired substrates.

ZrGeTe4 crystal Specifications


~4-5mm in size

Material properties

2D anisotropic IR semiconductor

Crystal structure

Tetragonal phase

Unit Cell Parameters

a=b=0.382nm, c=0.911nm, α=β=90°, γ=120°

Production Method

Flux zone

Characterization methods


ZrGeTe4 crystal Applications

Research on semiconductor electronic devices, sensors-detectors, optical devices, etc.

ZrGeTe4 crystal Packaging

Our ZrGeTe4 crystal is carefully handled during storage and transportation to preserve the quality of our product in its original condition.



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