Gallium Antimonide Single Crystal Substrate Supplier

Catalog No.	GA2156
Purity	99.99%
Molecular Formula	GaSb
Diameter	2", 3", 4"
Thickness	500±25 μm, 600±25 μm, 800±25μm
Orientation	(100) / (111) ±0.5°

Catalog No.

GA2156

Purity

99.99%

Molecular Formula

GaSb

Diameter

2", 3", 4"

Thickness

500±25 μm, 600±25 μm, 800±25μm

Orientation

(100) / (111) ±0.5°

Description of Gallium Antimonide Single Crystal Substrate

Gallium antimonide (GaSb) is one of the semiconductor materials, belonging to the III-V family, with an energy gap of 0.726 ev and a lattice constant of 0.61 nm. Gallium antimonide can usually be used as an infrared detector, infrared light-emitting diode, transistor, laser diode, etc.

Gallium Antimonide Single Crystal Substrate

Specifications of Gallium Antimonide Single Crystal Substrate

CAS Number	12064-03-8
Molecular formula	GaSb
Molecular weight	191.48
Appearance	Single crystal substrate
Density	5.619 g/mL
Melting point	710°C
Odor	Odorless

	2"	3"	4"
Mobility (cm2V-1S-1)	600-700
Carrier concentration(cm-3)	(1-2)* 10¹⁷
Diameter (mm)	50.5±0.5	76.2±0.5	100.0±0.5
Thickness (μm)	500±25	600±25	800±25
Orientation	(100) / (111) ±0.5°
Primary Flat Length (mm)	16±2	22±2	32.5±2
Secondary positioning edge length (mm)	8±1	11±1	18±1
TTV(μm)	<10	<10	<20
Bow(μm)	<10	<10	<20
Warp(μm)	<15	<15	<20

Applications of Gallium Antimonide Single Crystal Substrate

- Fiber Optic Communications (FOC)

- Infrared detectors, infrared LEDs and lasers and transistors

- Component of photoresists and other composites where high refractive index is desirable

- Laser diode

Safety Information

Symbol	GHS07, GHS09
Signal word	Warning
Hazard statements	H302 + H332-H411
Precautionary statemets	P273
Personal protective equipment	dust mask type N95 (US), Eyeshields, Gloves
RIDADR	UN 3077 9 / PGIII
WGK Germany	2