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Catalog No. | GA2156 |
Purity | 99.99% |
Chemical Formula | GaSb |
Diameter | 2", 3", 4" |
Thickness | 500±25 μm, 600±25 μm, 800±25μm |
Orientation | (100) / (111) ±0.5° |
Surface finish | Polished/ Unpolished/ Single-Side Polished (SSP)/ Double-Side Polished (DSP) |
100% U.S. Domestic Supply Chain — from raw materials to finished product.
Please indicate if you require materials that are fully China-free.
Stanford Advanced Materials (SAM) offer single crystal GaSb substrate and provide customers the widest choice of GaSb material with high uniformity of electrical properties and excellent surface quality.
Related products:Aluminum Nitride Substrates, Gallium Arsenide (GaAs), Gallium Nitride Powder (GaN), Gallium (III) Selenide (Ga2Se3).
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