Ion implantation is an important engineering process by which ions of a material are accelerated in an electrical field and impacted into a target. The process will change the physical, chemical, or electrical properties of the target, which is often used in semiconductor device fabrication, metal finishing, and materials science research.
The heart of an implanter system is the beam path, where ions are generated, concentrated, accelerated, and guided at high speed to the target. So the materials of the beam path should withstand harsh conditions including high temperature, aggressive process gas, and strong magnetic fields. Currently, the beam path is made of TZM, molybdenum, tungsten, graphite, ceramics, and steel.
Stanford Advanced Materials supplies various ion implantation components made of molybdenum, tungsten, TZM (Titanium-Zirconium-Molybdenum alloy). Further info please send us your inquiry.
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