GA2268 Gallium Antimony Wafer (GaSb)

Catalog No. GA2268
Material GaSb
Thickness 500-1000um
Conductive Type N - type/ P- type
Diameter Ø 2" / Ø 3" / Ø 4"

Stanford Advanced Materials (SAM) provides high quality single crystal GaSb wafer (Gallium Antimony) to the electronic and optoelectronic industry in diameter up to 4 inches.

Related products: Gallium Nitride Wafer, Sapphire Wafer, Silicon Carbide Wafer, Silicon Wafer, Gallium Arsenide Wafer, Germanium Wafer (Ge wafer).

Description of Gallium Antimony Wafer

GaSb crystal is a compound formed by 6N pure Ga and Sb element and is grown by Liquid Encapsulated Czochralski (LEC) method with EPD < 1000 cm -3. GaSb crystal has a high uniformity of electrical parameters and low defect density, suitable for MBE or MOCVD epitaxial growth. We have "epi ready” GaSb products with a wide choice in exact or off orientation, low or high doped concentration, and good surface finish. Please contact us for more product information.

 

Specifications of Gallium Antimony Wafer

Item

Specifications

Dopant

Undoped

Zinc

Tellurium

Conduction Type

P-type

P-type

N-type

Wafer Diameter

2” 3” 4”

Wafer Orientation

(100)±0.5°

Wafer Thickness

500±25um

Primary Flat Length

16±2mm

Secondary Flat Length

8±1mm

Carrier Concentration

(1-2)x1017cm-3

(5-100)x1017cm-3

(1-20)x1017cm-3

Mobility

600-700cm2/V.s

200-500cm2/V.s

2000-3500cm2/V.s

EPD

<2×103cm-2

TTV

<10um

BOW

<10um

WARP

<12um

Laser Marking

upon request

Suface Finish

P/E, P/P

Epi Ready

yes

Package

Single wafer container or cassette


 

Applications of Gallium Antimony Wafer

- 2-4mm band optical device substrate
- Microwave device
- Laminated solar cell

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