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GA2269 Gallium Phosphide Wafer (GaP)

Catalog No. GA2269
Material GaP
Thickness 400um
Conductive Type N - type
Diameter Ø 2"
Size 2’’ dia x 400um-500um thickness, 5x5x0.3-0.5mm, 10x10x0.45mm,
Surface finish Polished/ Unpolished/ Single-Side Polished (SSP)/ Double-Side Polished (DSP)

Gallium Phosphide Wafer (GaP) is an important semiconductor material that has unique electrical properties to other III-V compound materials. Stanford Advanced Materials (SAM) provides a high-quality single-crystal GaP wafer (Gallium phosphide) to the electronic and optoelectronic industry in diameters up to 2 inches.

Related products:  Gallium Nitride WaferSapphire WaferSilicon Carbide WaferSilicon WaferGallium Arsenide Wafer,  Germanium Wafer (Ge wafer).

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Gallium Phosphide Wafer (GaP)
Gallium Phosphide Wafer (GaP)
Gallium Phosphide Wafer (GaP)
Gallium Phosphide Wafer (GaP)
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