Catalog No. | GA2269 |
---|---|
Material | GaP |
Thickness | 400um |
Conductive Type | N - type |
Diameter | Ø 2" |
Size | 2’’ dia x 400um-500um thickness, 5x5x0.3-0.5mm, 10x10x0.45mm, |
Gallium Phosphide Wafer (GaP) is an important semiconductor material that has unique electrical properties to other III-V compound materials. Stanford Advanced Materials (SAM) provides a high-quality single-crystal GaP wafer (Gallium phosphide) to the electronic and optoelectronic industry in diameters up to 2 inches.
Related products: Gallium Nitride Wafer, Sapphire Wafer, Silicon Carbide Wafer, Silicon Wafer, Gallium Arsenide Wafer, Germanium Wafer (Ge wafer).
GaP single crystals are usually grown by the LEC technique using 6N high purity materials. GaP wafer is an important semiconductor material that has unique electrical properties as other III-V compound materials and is widely used as red, yellow, and green LED (light-emitting diodes).
Gallium phosphide wafers by doping sulfur or tellurium can produce n-type semiconductors.
Crystal Structure |
Cubic. a =5.4505 ?/FONT> |
|
Growth Method |
CZ (LEC) |
|
Density |
4.13 g/cm3 |
|
Melt Point |
1480 oC |
|
Thermal Expansion |
5.3 x10-6 / oC |
|
Dopant |
S doped |
undoped |
Crystal growth axis |
<111> or <100> |
<100> or <111> |
Conducting Type |
N |
N |
Carrier Concentration |
2 ~ 8 x1017 /cm3 |
4 ~ 6 x1016 /cm3 |
Resistivity |
~ 0.03 W-cm |
~ 0.3 W-cm |
EPD |
< 3x105 |
< 3x105 |
- Opto device: Visible LED such as display element (red, green) and backlight of LCD (yellow, green) etc.
Gallium phosphide (GaP) is a polycrystalline compound semiconductor that appears pale orange and has an indirect band gap of 2.26 eV.
GA2268 Gallium Antimony Wafer (GaSb)
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SE2799 Gallium (II) Selenide (GaSe) (CAS 12024-11-2)
GA3162 Gallium(III) Acetylacetonate (CAS: 14405-43-7)
SB3878 Gallium Antimonide (GaSb) (CAS No. 12064-03-8)
BR3879 Gallium Bromide (GaBr3) (CAS No. 13450-88-9)
CY4391 Gallium Sulfide (GaS) Crystal
CY4611 Gallium Oxide Wafer
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