GA2269 Gallium Phosphide Wafer (GaP)

Catalog No. GA2269
Material GaP
Thickness 400um
Conductive Type N - type
Diameter Ø 2"

Stanford Advanced Materials (SAM) provides high quality single crystal GaP wafer (Gallium phosphide) to the electronic and optoelectronic industry in diameter up to 2 inches.

Related products:  Gallium Nitride WaferSapphire WaferSilicon Carbide WaferSilicon WaferGallium Arsenide Wafer,  Germanium Wafer (Ge wafer).

Description of Gallium Phosphide Wafer

GaP single crystals are usually grown by LEC technique using 6N high purity materials. GaP wafer is an important semiconductor material that has unique electrical properties as other III-V compound materials and is widely used as red, yellow, and green LED (light-emitting diodes).

 

Specifications of Gallium Phosphide Wafer

Growth

LEC                                                           

Diameter

Ø 2"

Thickness

400 um

Orientation

<100> / <111> / <110> or others

Off orientation

Off 2° to 10°

Surface

One side polished or two sides polished

Flat options

EJ or SEMI. Std.

TTV

<= 10 um

EPD

<= 2E5 cm-2

Grade

Epi polished grade / mechanical grade


 

Applications of Gallium Phosphide Wafer

-       Opto device: Visible LED such as display element (red, green) and backlight of LCD (yellow, green) etc.

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