GA2269 Gallium Phosphide Wafer (GaP)

Catalog No. GA2269
Material GaP
Thickness 400um
Conductive Type N - type
Diameter Ø 2"
Size 2’’ dia x 400um-500um thickness, 5x5x0.3-0.5mm, 10x10x0.45mm,

Gallium Phosphide Wafer (GaP) is an important semiconductor material that has unique electrical properties to other III-V compound materials. Stanford Advanced Materials (SAM) provides a high-quality single-crystal GaP wafer (Gallium phosphide) to the electronic and optoelectronic industry in diameters up to 2 inches.

Related products:  Gallium Nitride WaferSapphire WaferSilicon Carbide WaferSilicon WaferGallium Arsenide Wafer,  Germanium Wafer (Ge wafer).

Description of Gallium Phosphide Wafer

GaP single crystals are usually grown by the LEC technique using 6N high purity materials. GaP wafer is an important semiconductor material that has unique electrical properties as other III-V compound materials and is widely used as red, yellow, and green LED (light-emitting diodes).

Gallium phosphide wafers by doping sulfur or tellurium can produce n-type semiconductors.

Specifications of Gallium Phosphide Wafer

Crystal Structure

Cubic.            a =5.4505 ?/FONT>

Growth Method

CZ (LEC)

Density

4.13  g/cm3

Melt Point

1480  oC

Thermal Expansion

5.3 x10-6  / oC

Dopant

S doped

undoped

Crystal growth axis

<111>  or <100>

<100> or <111>

Conducting Type

N

N

Carrier Concentration

2 ~ 8 x1017 /cm3

4 ~ 6 x1016 /cm3

Resistivity

~ 0.03 W-cm

~ 0.3 W-cm

EPD

< 3x105

< 3x105


 

Applications of Gallium Phosphide Wafer

-       Opto device: Visible LED such as display element (red, green) and backlight of LCD (yellow, green) etc.

Gallium phosphide (GaP) is a polycrystalline compound semiconductor that appears pale orange and has an indirect band gap of 2.26 eV.

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