CY4394 Tantalum Disulfide (1T-TaS2) Crystal

Tantalum Disulfide Crystal Description

Tantalum Disulfide Crystal at ambient pressure shows a metallic phase at high temperatures (>550K), an incommensurate CDW (ICCDW) phase below 550 K, a nearly commensurate CDW (NCCDW) phase below 350 K and a commensurate CDW (CCDW) phase including a Mott phase below ~180 K. The layers are stacked together via van der Waals interactions and can be exfoliated into thin 2D layers. 1T TaS2 belongs to the group-V transition metal dichalcogenides (TMDC).

Tantalum Disulfide Crystal Specifications

Tantalum Disulfide Crystal Application

Tantalum Disulfide Crystal is a semiconductor with an indirect band gap of ~2.2 eV.

Tantalum Disulfide Crystal XRD

Tantalum Disulfide Crystal Packaging

Our Tantalum Disulfide Crystal is carefully handled during storage and transportation to preserve the quality of our product in its original condition.

Tantalum Disulfide Crystal FAQs

Q1: What is tantalum disulfide (TaS2)?

Tantalum disulfide is a layered transition metal dichalcogenide (TMDC) with the chemical formula TaS2. It belongs to the same category as materials like molybdenum disulfide (MoS2) and is known for its distinctive electrical properties and layered structure.

Q2: What are the properties of tantalum disulfide crystals?

TaS2 is renowned for its ability to exhibit a range of electrical behaviors, including metallic, superconducting, and charge density wave (CDW) states, depending on its thickness and external conditions like temperature and pressure. It has strong in-plane bonds and weak out-of-plane interactions, allowing layers to be easily exfoliated.

Q3: How are tantalum disulfide crystals synthesized?

Synthesis methods include chemical vapor transport (CVT), molecular beam epitaxy (MBE), and mechanical exfoliation from bulk TaS2. Each method affects the crystal quality, size, and the specific phase of TaS2 produced (e.g., 1T, 2H).