CY2299 LSAT Crystal Substrates

Catalog No. CY2299
Size 10x3, 10x5, 10x10, 15x15, 20x15, 20x20 mm
Material (La, Sr) (Al, Ta) O3
Appearance Colorless, light brown

Stanford Advanced Materials (SAM) offers LAST Crystal Substrate and provides customers the widest choice of LAST material with high uniformity of electrical properties and excellent surface quality.

Related products: KTaO3 Crystal Substrate, LiAlO2 Crystal Substrate, LiF Crystal Substrate, NdGaO3 Crystal Substrate, Gallium Antimonide Single Crystal Substrate.

Description of LSAT Crystal Substrates

Compared with the more commonly used high-temperature superconducting thin-film LaAlO3 crystal, (La, Sr) (Al, Ta) O3 (referred to as LSAT) has the same crystal structure, and the phase transition temperature is low, and twins are not easy to appear, this excellent high temperature superconducting thin film substrates are gradually recognized. At the same time, its <111> direction has the same hexagonal symmetry as GaN, so it can be used as a substrate material for GaN and AlN films.

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Specification of LSAT Crystal Substrates

Major Capability Parameter
Crystal Structure Cubic
Lattice Constant a=3.868 A
Melt Point(°C) 1840
Density 6.74(g/cm3)
Hardness 6.5(mohs)
Dielectric Constant 22
Thermal Expansion Coefficient 10 x 10-6 /K
Appearance Colorless, light brown
Size
10x3, 10x5, 10x10, 15x15, 20x15, 20x20
Ф2″
Thickness 0.5mm, 1.0mm
Polishing Single or double side polished
Crystal Orientation <100>, <110>, <111>±0.5º
Orientation Accuracy ±0.5°
Edge Orientation Accuracy: 2° (special in 1°)
Ra ≤5Å (5µm×5µm)


Applications of LSAT Crystal Substrates

Due to the same hexagonal symmetry as GaN, LSAT Crystal Substrates can be used as a substrate material for GaN and AlN films.

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