CY2536 Silicon-Germanium (Si-Ge) Single Crystal Substrates

Catalog No. CY2536
Size 4" diameter x 0.5 mm
Material Si-Ge(2 wt% Ge)
Orientation <100> ±0.5°
Growth Method Crystallization process

Silicon-Germanium (Si-Ge) Single Crystal Substrates have been widely used thanks to its excellent properties. Stanford Advanced Materials (SAM) has over two decades’ experience in the manufacture and sale of the Silicon-Germanium (Si-Ge) Single Crystal Substrates.

Related: LiAlO2 Crystal Substrate, LAST Crystal Substrate, LiF Crystal Substrate, NdGaO3 Crystal Substrate.

 

Silicon-Germanium (Si-Ge) Single Crystal Substrates Description

Silicon-Germanium (Si-Ge) Single Crystal Substrates have been widely used in the industry thanks to its excellent physical and chemical properties. Stanford Advanced Materials (SAM) has rich experience in the manufacture of the Silicon-Germanium (Si-Ge) Single Crystal Substrates and provides customers with high-quality Silicon-Germanium (Si-Ge) Single Crystal Substrates at a very competitive price.

 

Silicon-Germanium (Si-Ge) Single Crystal Substrates Specifications

Conductivity

P type

Resistivity

7-8  ohm-cm

Polish

 Two sides polished   

Surface roughness

 < 5A

Packing

Independent vacuum packaging for each piece

 

Silicon-Germanium (Si-Ge) Single Crystal Substrates Applications

Silicon-Germanium (Si-Ge) Single Crystal Substrates can be used in the field of semiconductor material and silicon-based photonic devices.

2536

 

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