CY2538 Bismuth Telluride (Bi2Te3) Single Crystal Substrates

Catalog No. CY2538
Size 5x5x0.1 mm;10x10x0.1mm
Material Bi2Te3
Orientation Highly oriented layer structure along <0001>
Growth Method High-pressure vertical bridgman

Bismuth Telluride (Bi2Te3) Single Crystal Substrates have been widely used in the industry due to its unique physical and chemical properties. Stanford Advanced Materials (SAM) can offer a variety size of Bismuth telluride (Bi2Te3) Single Crystal Substrates.

Related products: LiAlO2 Crystal Substrate, LAST Crystal Substrate, LiF Crystal Substrate, NdGaO3 Crystal Substrate.

 

Bismuth Telluride (Bi2Te3) Single Crystal Substrates Description

Bismuth Telluride (Bi2Te3) Single Crystal Substrates have a wide range of applications in the field of thermoelectric material. Stanford Advanced Materials (SAM) has rich experience in the manufacture of the Bismuth Telluride (Bi2Te3) Single Crystal Substrates and can offer customers a variety size of Bismuth telluride (Bi2Te3) Single Crystal Substrates at an affordable price.

 

Bismuth Telluride (Bi2Te3) Single Crystal Substrates Specifications

Bismuth Telluride (Bi2Te3) Single Crystal Substrate

Crystal Structure

Hexagonal, group 166,R-3M

Grown Method

High-pressure vertical Bridgman

Lattice constant

  a=4.38A    c=30.5A

Surface

 as Cleavaged

Purity

99.999%, atomic ratio

Melting Point

585 oC

Resistivity 

   0.1-5 mohm. cm

Mobility

3000 cm2 / V.s 

Packing

packed in a plastic bag with vacuum

 

Bismuth telluride (Bi2Te3) Single Crystal Substrates Applications

Bismuth Telluride (Bi2Te3) Single Crystal Substrates have a wide range of applications in the field of thermoelectric material.

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